Speaker
Dr
Elena Verbitskaya
(Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
Description
Enhancement of the collected charge Qc in Si detectors irradiated beyond 10^15 neq/cm2 is analyzed basing on the PTI model and compared with the internal gain in avalanche photodiodes. The results show that in heavily irradiated Si detectors Qc enhancement due to avalanche multiplication is strongly restricted and simultaneously stabilized by the negative feedback arisen from carrier trapping, which is an inherent property of the diodes with high concentration of deep level defects in the sensitive bulk. This negative feedback reduces the sensitivity of the internal Qc gain to the design of the detector high electric field region.
Author
Dr
Elena Verbitskaya
(Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
Co-authors
Prof.
Andrei Zabrodskii
(Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
Dr
Panja Luukka
(Helsinki Institute of Physics, Helsinki, Finland)
Dr
Vladimir Eremin
(Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
Dr
Zheng Li
(Brookhaven National Laboratory, USA)
