13–15 Nov 2013
CERN
Europe/Zurich timezone

T-CAD simulation of Lorentz angle

14 Nov 2013, 17:25
20m
CERN

CERN

503-1-001 (Council Chamber) on 13th Nov & 222-R-001 (Filtration Plant) on 14th & 15th Nov.
Standard (20 min including discussion) Device Simulations and some key experimental data

Speaker

Andreas Matthias Nurnberg (KIT - Karlsruhe Institute of Technology (DE))

Description

T-CAD simulations are a powerful tool for understanding the properties of silicon sensors. Silvaco T-CAD allows the implementation of magnetic fields of several Tesla in the simulation. Using this simulation package, Lorentz angle measurements on strip sensors have been reproduced. Results on non-irradiated devices and the ongoing work of implementing radiation damage using an effective trap model will be presented.

Primary author

Andreas Matthias Nurnberg (KIT - Karlsruhe Institute of Technology (DE))

Co-authors

Alexander Dierlamm (KIT - Karlsruhe Institute of Technology (DE)) Prof. Thomas Muller (KIT - Karlsruhe Institute of Technology (DE)) Wim De Boer (KIT - Karlsruhe Institute of Technology (DE))

Presentation materials