13–15 Nov 2013
CERN
Europe/Zurich timezone

Future sensor-chip packaging technologies at CiS

15 Nov 2013, 11:40
20m
CERN

CERN

503-1-001 (Council Chamber) on 13th Nov & 222-R-001 (Filtration Plant) on 14th & 15th Nov.

Speaker

Tobias Wittig (Technische Universitaet Dortmund (DE))

Description

In the past, the CiS research institute has made a mark as a vendor of reliable radiation hard planar silicon sensors for various important HEP detectors. In addition to the sensor production, it is aiming for an extension of the possibilities of in-house sensor-chip packaging. Initial tests of a combination of electroless nickel UBM and solder ball bumping have been started. This batch-wise process presents a cost-efficient method for large-area silicon applications. Further approaches include light induced or MoSi-based electroplating. The investigations of radiation hardness and minimization of the bump pad dimensions as requested for future pixel designs are as well an important objective which is pursued.

Primary author

Tobias Wittig (Technische Universitaet Dortmund (DE))

Co-authors

Arno Emanuel Kompatscher (Technische Universitaet Dortmund (DE)) Ralf Roeder (CiS FIMP)

Presentation materials