Speaker
Prof.
Juozas Vaitkus
(Vilnius University)
Description
The electrical properties of the irradiated by neutrons Si are analyzed by means of the Hall effect and magnetoresistance temperature dependence in a few series of Si samples. It is demonstrated that the electron mobility decrease with temperature as a power law with index less than in the nonirradiated silicon and can become near to one in the highly irradiated silicon. The analyze of contribution of the local levels showed a possibility to approximate the temperature dependence by V2 and V3 contribution in the samples irradiated up to 3e14 cm-2. In a higer irradiated samples the activation energy depended on the fluence and a modified model of the cluster and its environment is proposed.
Primary author
Prof.
Juozas Vaitkus
(Vilnius University)
Co-authors
Dr
Algirdas Mekys
(Institute of Applied Research, Vilnius University)
Dr
Jurgis Storasta
(Dept. Semiconductor Physics, Vilnius University)
Mr
Vytautas Rumbauskas
(Institute of Applied Research, Vilnius University)
