13–15 Nov 2013
CERN
Europe/Zurich timezone

Preliminary results on measurements of surface recombination velocity on SLIM edges passivated Si (not Friday)

13 Nov 2013, 10:50
20m
CERN

CERN

503-1-001 (Council Chamber) on 13th Nov & 222-R-001 (Filtration Plant) on 14th & 15th Nov.

Speaker

Prof. Juozas Vaitkus (Vilnius University)

Description

The light pulse excited microwave conductivity decay method for surface recombination rate measurement is presented. The preliminary results are performed in the differently passivated silicon samples surface.

Primary author

Dr Eugenijus Gaubas (Vilnius university)

Co-authors

Mr Audrius Tekorius (Faculty of Physics, Vilnius University) Hartmut Sadrozinski (SCIPP, UC santa Cruz) Prof. Juozas Vaitkus (Vilnius University) Dr Tomas Ceponis (Institute of Applied research, Vilnius University) Vitaliy Fadeyev (U)

Presentation materials