Speaker
Christopher Betancourt
(Freiburg University)
Description
The Collection charge of specially designed charge multiplication silicon strip detectors produced by MICRON Semiconductor Co. Ltd. within the CERN RD50 framework is investigated. Charge collection measurements are performed before and after irradiation with a proton fluence of 1e15 and a neutron fluence ranging from 1-5e15 1 MeV neq /cm2 (neq /cm2). Structures and modifications on these devices include implants processed with increased diffusion times and energies, different sensor thicknesses, the use of intermediate biased or floating strips between the readout strips, and several different strip width and pitch geometries. The charge collection for these devices is compared to standard FZ 300 μm thick silicon strip sensors having a strip width=25 μm and pitch=80 μm. Several sensors exhibit enhancement of the collected charge compared to the standard sensor after irradiation. Measurements include position resolve studies using an IR laser in order to investigate low and high field regions near the detector surface.
Primary author
Christopher Betancourt
(Freiburg University)
Co-authors
Dean Charles Forshaw
(University of Liverpool (GB))
Gianluigi Casse
(University of Liverpool (GB))
Karl Jakobs
(Albert-Ludwigs-Universitaet Freiburg (DE))
Mr
Marc Hauser
(University of Freiburg)
Paul Dervan
(University of Liverpool (GB))
Peter Kodys
(Charles University (CZ))
Philipp Sommer
(University of Freiburg)
Riccardo Mori
(Albert-Ludwigs-Universitaet Freiburg (DE))
Susanne Kuehn
(Albert-Ludwigs-Universitaet Freiburg (DE))
Sven Wonsak
(University of Liverpool (GB))
Ulrich Parzefall
(Albert-Ludwigs-Universitaet Freiburg (DE))
