13–15 Nov 2013
CERN
Europe/Zurich timezone

Non-uniform 3-level defect model and status of edge-TCT simulations

14 Nov 2013, 14:55
20m
CERN

CERN

503-1-001 (Council Chamber) on 13th Nov & 222-R-001 (Filtration Plant) on 14th & 15th Nov.

Speaker

Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))

Description

Proton model (effective 2-defect model based on the EVL model) used in Synopsys Sentaurus package, has proven to produce matching simulation results with measurements. However, at high fluence (> 1e15 cm-2) and thus high oxide charge, the model does not produce radiation enhanced isolation to the strips, observed in a real p-type detector. Also simulated Cint and CCE loss in the center of the pitch reflect this shortcoming. Novel non-uniform 3-level defect model solves these problems without affecting the experimentally matching simulation results of proton model. Edge-TCT provides a method for the measurement of the drift velocity of the charge carriers as a function of depth. This could make it possible to extract electric field distribution in the detector bulk. Comparison of non-irradiated/irradiated device edge-TCT simulations with measurements will be presented.

Author

Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))

Co-author

Jasu Haerkoenen (Helsinki Institute of Physics (FI))

Presentation materials