Speaker
Sven Wonsak
(University of Liverpool (GB))
Description
First charge collection results with room temperature annealed dedicated RD50 charge multiplication sensors will be presented, at 1e15 neq/cm2 and 5e15 neq/cm2. The multiplication sensors feature many different structures specially designed to take advantage of multiplication after heavy irradiation. These devices were produced by Micron Semiconductor Ltd (UK).
To investigate the current dependence of irradiated silicon strip detectors, ATLAS07 sensors were irradiated at Birmingham with doses up to 1e15 neq/cm2. CV and IV measurements were performed at different temperatures which allow verification of the temperature scaling formula. Additionally, the correlation of leakage current and the irradiated fluence will be presented.
Author
Sven Wonsak
(University of Liverpool (GB))
Co-authors
Christopher Betancourt
(Albert-Ludwigs-Universitaet Freiburg (DE))
Dean Charles Forshaw
(University of Liverpool (GB))
Gianluigi Casse
(University of Liverpool (GB))
Ilya Tsurin
(University of Liverpool (GB))
Karl Jakobs
(Albert-Ludwigs-Universitaet Freiburg (DE))
Marc Manuel Hauser
(Albert-Ludwigs-Universitaet Freiburg (DE))
Michael Wormald
(University of Liverpool (GB))
Paul Dervan
(University of Liverpool (GB))
Peter Kodys
(Charles University (CZ))
Riccardo Mori
(Albert-Ludwigs-Universitaet Freiburg (DE))
Susanne Kuehn
(Albert-Ludwigs-Universitaet Freiburg (DE))
Dr
Tony Affolder
(University of Liverpool (GB))
Ulrich Parzefall
(Albert-Ludwigs-Universitaet Freiburg (DE))
