Speaker
S.V. Nistor
(NIMP - Magurele (RO))
Description
The presence and nature of the paramagnetic point defects produced in single crystalline samples of high resistivity (3-4 kOhm cm) n-type silicon (FZ- Wacker), doped with 17O enriched isotope, after irradiation with 27MeV electrons (2 x 1016 cm-2), has been investigated by Q-band (34 GHz) electron spin resonance (ESR) spectroscopy in the 10- 296 K temperature range. Changes in the nature and concentration of the paramagentic centers observed before and after in-situ 637 nm optically excitation have been further observed following subsequent isochronal annealing from 150 0C up to 300 0C in steps of 50 degrees. A tentative comparison with thermally stimulated currents (TSC) data on such samples subjected to similar irradiation and thermal tratments is also presented.
Primary author
S.V. Nistor
(NIMP - Magurele (RO))
Co-author
Dr
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
