Speaker
Gregor Kramberger
(Jozef Stefan Institute (SI))
Description
Silicon n-p diodes with heavily doped p layer underneath the n implant were designed to benefit from charge multiplication process already before irradiation (Low Gain Amplification Detectors). Two different sets of such detectors with different gains were characterized before and after irradiation by reactor neutrons and recently also by 800 MeV protons to equivalent fluences of up to 1016 cm-2. The devices were studied by different techniques; CV, IV, TCT and signal measurements from 90Sr source. The gain, which was initially up to 10, was found to decrease with neutron fluence. The main reason for this seems to be the decrease of effective doping concentration in the highly doped p layer leading to decrease of electric field strength. The conclusions drawn from the measurements were also reproduced in simulation.
Author
Gregor Kramberger
(Jozef Stefan Institute (SI))
Co-authors
Giulio Pellegrini
(Universidad de Valencia (ES))
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
Igor Mandic
(Jozef Stefan Institute (SI))
Marko Mikuz
(Jozef Stefan Institute (SI))
Dr
Marko Zavrtanik
(Jozef Stefan Institute (SI))
Marta Baselga Bacardit
(Instituto de Fisica Corpuscular (ES))
Salvador Hidalgo Villena
(Universidad de Valencia (ES))
Vitaliy Fadeyev
(University of California,Santa Cruz (US))
Vladimir Cindro
(Jozef Stefan Institute (SI))
