Speaker
Sven Wonsak
(University of Liverpool (GB))
Description
To investigate the current dependence of irradiated silicon strip detectors, ATLAS07 and Micron sensors were irradiated at Birmingham and Ljubljana with doses up to 2e16 neq/cm$^2$. IV measurements were performed at different temperatures which allow the calculation of the effective gap energy Eg (IV scaling) and the current related damage rate $\alpha$.
TCT and edge TCT (Transient Current Technique) measurements with red and IR laser of dedicated RD50 charge multiplication sensors allow a deeper investigation of charge collection. The multiplication sensors, produced by Micron Semiconductor Ltd (UK) and irradiated at fluences of 1e15 neq/cm$^2$ and 5e15 neq/cm$^2$, feature many different structures specially designed to take advantage of multiplication after heavy irradiation.
Primary author
Sven Wonsak
(University of Liverpool (GB))
Co-authors
Christian Gallrapp
(CERN)
Christopher Betancourt
(Albert-Ludwigs-Universitaet Freiburg (DE))
Dean Charles Forshaw
(University of Liverpool (GB))
Gianluigi Casse
(University of Liverpool (GB))
Hannes Neugebauer
(Hamburg University (DE))
Karl Jakobs
(Albert-Ludwigs-Universitaet Freiburg (DE))
Marc Manuel Hauser
(Albert-Ludwigs-Universitaet Freiburg (DE))
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
Michael Moll
(CERN)
Paul Dervan
(University of Liverpool (GB))
Dr
Peter Kodys
(Charles University)
Riccardo Mori
(Albert-Ludwigs-Universitaet Freiburg (DE))
Susanne Kuehn
(Albert-Ludwigs-Universitaet Freiburg (DE))
Ulrich Parzefall
(Albert-Ludwigs-Universitaet Freiburg (DE))
