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Description
ZnS, a wide band gap semiconductor and good candidate for dye sensitized semiconductor solar cell (DSSC) photoanode was doped with aluminum. However, the role of ZnS and Al-doped ZnS in DSSC is lack of knowledge. Herein, we studied the effect of ZnS and Al-doped ZnS in TiO$_2 photoanode using a simplest preparation. The thin film was prepared by doctor blade technique using a mixture of TiO$_2 paste with ZnS and ZnS:Al. Structural property and the relevance of each elements in all anode thin films was characterized by means of X-ray diffraction. The Ru-based dye, N719 was used for semiconductor sensitization. The absorption and photoluminescence of TiO$_2 /N719 ,TiO$_2∶ZnS/N719 , TiO$_2∶ZnS:Al/N719 photoanodes were investigated. Then the role of ZnS and Al-doped ZnS in dye sensitized TiO$_2 photoanode is discussed.