Speaker
Ray YAREMA
Description
Industry is pursuing 3D integrated circuits to enhance
circuit performance. The techniques and technologies
being employed can be of benefit to the High Energy
Physics community. There are two general approaches
that can be followed: die to wafer bonding, and wafer
to wafer bonding. Each has its own benefits. Both of
these approaches are being investigated at Fermilab.
The die to wafer bonding approach is being studied
through the services of two different vendors using
devices produced at Fermilab for a previous
experiment. The wafer to wafer bonding approach is
being pursued with one vendor using their 0.18 um SOI
process. The capabilities of these two different
approaches are presented through a brief description
of devices that have been fabricated. Critical processes
for 3D integration are described. Design of a 3D circuit
in an SOI process for High Energy Physics is presented
