High Energy Accelerator Research Organization (JP)
Author in the following contributions
- High Resolution SOI Pixel Detector
- Development of a monolithic pixel sensor based on SOI technology for the ILC vertex detector
- Development and performance of double SOI pixel sensors
- Synchrotron radiation X-ray experiments for a pulse-counting type SOI pixel for the soft X-ray measurements
- Prototype of a 250 µm Pitch 36-Channel Silicon Photo Multiplier Array Using Silicon on Insulator Technology for Photon Counting Computed Tomography
- Development of Debye-Ring Measurement System Using SOI Pixel Detector
- Development of new high-speed readout system for SOI pixel detectors
- Imaging Detector for Ultracold Neutrons using SOI Pixel Sensors and its Application to an Experimental Test of the Weak Equivalence Principle
- Double Photon Emission Compton imaging based on event-driven SOI and GAGG-SiPM pixel detectors
- Total ionizing dose effects on the SOI pixel sensor for X-ray astronomical use
- Investigation of Radiation Hardness Improvement by Applying Back-gate Bias for FD-SOI MOSFETs
- Performance evaluation of an SOI pixel sensor with in-pixel binary counters
- Development of a far-infrared image sensor with Si-supported Ge BIB detector and FD-SOI cryo-CMOS ROIC hybritized by nano-particle deposition Au-bump
- A monolithic mid-infrared image sensor with SOI technology
- Compensation for Radiation Damage to SOI Pixel Detector via Tunneling
- Investigation of Soft X-ray Performance of Kyoto's Event-Driven X-ray Astronomical SOI Pixel Sensor, XRPIX
- Evaluation of Kyoto's Event-Driven X-ray Astronomical SOI Pixel Sensor with a Large Imaging Area
- Design and Development of an Event-driven SOI Pixel Detector for X-ray Astronomy
- X-ray response evaluation in subpixel level for X-ray SOI pixel detectors
- Proton Radiation Damage Experiment for X-ray SOI Pixel Detectors
- Linear mode reach through APD for X-ray imaging in 0.2μm SOI-CMOS technology
- Application of a monolithic SOI pixel detector to evaluation of strength of industrial materials
- Development of a cryogenic readout circuit based on FD-SOI CMOS for a far-infrared astronomical image sensor
