21–23 Nov 2016
CERN
Europe/Zurich timezone

Common project proposal: Thin-film based silicon sensors

23 Nov 2016, 11:50
20m
6/2-024 - BE Auditorium Meyrin (CERN)

6/2-024 - BE Auditorium Meyrin

CERN

6-2-024
120
Show room on map

Speaker

Daniel Muenstermann (Lancaster University (GB))

Description

Recently, Fraunhofer ISE developed a technology with the potential to epitaxially produce very cost-efficient thin-films of 50-200 um thickness for the solar cell industry, aiming to lower the price for a 156mm by 156mm substrate to below the ~EUR level. Such thicknesses are precisely what is required for HL-LHC applications and the exitaxial growth might yield some additional benefits.

I would like to propose an RD50 common project to evaluate the suitability of such silicon for the production of sensors and - if successful - their radiation hardness. The presentation will provide details about the process and its limitations and a propose a roadmap for the procurement and processing of an initial batch of substrates.

Presentation materials