3–5 Feb 2010
Lawrence Berkeley National Lab
US/Pacific timezone
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Towards a high performance vertex detector based on 3D integration of Deep N-Well MAPS

4 Feb 2010, 15:30
25m
Perseverance Hall (Lawrence Berkeley National Lab)

Perseverance Hall

Lawrence Berkeley National Lab

1 Cyclotron Road Berkeley CA, USA
Oral presentation Electronic circuits (3D and conventional) Electronic circuits (3D and conventional)

Speaker

Valerio Re (INFN)

Description

The development of deep N-well (DNW) CMOS active pixel sensors was driven by the ambitious goal of designing a monolithic device with similar functionalities as in hybrid pixel readout chips, such as pixel-level sparsification and time stamping. The implementation of the DNW MAPS concept in a 3D vertical integration process naturally leads the designer towards putting more intelligence in the chip and in the pixels themselves, achieving novel device structures based on the interconnection of two or more layers fabricated in the same technology. These devices are read out with a data-push scheme that makes it possible to use pixel data for the generation of a flexible level 1 track trigger, based on associative memories, with short latency and high efficiency. This paper gives an update of the present status of DNW MAPS design in both 2D and 3D versions, and presents a discussion of the architectures that are being devised for the Layer 0 of the SuperB Silicon Vertex Tracker.

Author

Valerio Re (INFN)

Presentation materials