Speaker
Esko Mikkola
(Alphacore, Inc.)
Description
Radiation-hard, compact, low-mass, hybrid GaN and CMOS integrated module DC-DC converter has been designed. The converter has an input voltage of up to 18V regulated down to an output voltage of 1.5V, with 7A maximum load current. It exhibits >70% efficiency. Discrete GaN transistors are used for the power stage, and the controller circuitry and power device drivers are integrated on a 0.35um CMOS chip. RHBD techniques have been implemented to meet TID levels ≥150 megarad(Si). This presentation discusses the successful test results of the custom-designed CMOS driver/controller ASIC and the whole converter module that uses this ASIC.
Authors
Yu Long
(Alphacore, Inc)
Alexander Odishvili
(Alphacore, Inc.)
Phaneendra Bikkina
(Alphacore, Inc.)
Andrew Levy
(Alphacore, Inc.)
Esko Mikkola
(Alphacore, Inc.)
Ashwath Hegde
(Arizona State University)
Gauri Koli
(Arizona State University)
Jennifer Kitchen
