Characterization of Soft Error Rate against Memory Elements Spacing and Clock Skew in Logic with Triple Modular Redundancy in a 65nm Process

20 Sept 2018, 17:00
1h 30m
FBS 0.01/0.02 (Feestzaal)

FBS 0.01/0.02 (Feestzaal)

Poster Radiation Tolerant Components and Systems Posters

Speaker

Dr Sandeep Miryala (Fermi National Accelerator Laboratory)

Description

Single Event Effects introduce soft errors in ASICs. Design methodologies like Triple Modular Redundancy (TMR) with clock skew insertion, a system level redundancy technique is a common practice by designers to mitigate soft error rates. However, the optimal spacing between memory elements in a TMR in 65nm process hasn't been addressed so far. RD53SEU is a mini ASIC development under the framework of the CERN RD53 collaboration to characterize the soft error rates against the separation spacing and clock skew between memory elements in a TMR. This article describes the architecture and design aspects of the RD53SEU test chip.

Summary

Single Event Effects (SEEs) are very common in ASICs developed for detector electronics as they are exposed to energetic ionizing particles from the particle collisions. SEEs comprise of Single Event Upsets (SEUs) and Single Event Transients (SETs) and manifest themselves as bit flips in sequential elements and glitches in combinational gates. A Single Event Upset (SEU) in data path register results in incorrect data packets from the serial links, whereas, an SEU in global configuration registers can make a chip non-functional.
In a joint efforts between Atlas/CMS groups for the RD53B pixel chip, the estimated bit flips due to SEUs in global configuration registers is one-bit flip per ~20 seconds per chip, whereas in pixel registers is ~60 bit flips per second per pixel per chip. Hence SEE tolerant design is unavoidable for RD53B at pixel configuration registers, global configuration registers and data path registers in digital chip bottom. Triple Modular Redundancy with clock skew is a system level redundancy technique to counter single event effects.
Before resorting to Triple Modular Redundancy (TMR), the common design related questions or the designer guidelines must be addressed. One of them is, what should be the spacing between memory elements and how does this impact soft error rate and layout efficiency. Characterizing soft error rate as a function of memory spacing in a TMR helps designers to choose optimal spacing for their applications. An optimal spacing not only determine the final area of the design but also reduces the multiple bit effects in a TMR. A similar question arises with latch based TMR as well. Study of soft error rates on latch based TMR is also crucial as they are often used to measure the Time Over Threshold (TOT) in a pixelated integrated circuit. It is also understood that by introducing clock skew between memory elements in a TMR logic, designers can mitigate single event transients. Clock skewing affects the timing margin of the designs and the optimal clock skew to mitigate SEE hasn’t been addressed. All these designer guidelines can be addressed through a test chip RD53SEU. It’s architecture and the design of various test structures is presented in this article.

The design of the chip is underway with the prospective submission for fabrication in August 2018.

Author

Dr Sandeep Miryala (Fermi National Accelerator Laboratory)

Co-authors

Dr Tomasz Hemperek (Physics Institute of Bonn University) Dr Mohsine Menouni (Centre de Physique des Particules de Marseille)

Presentation materials

Peer reviewing

Paper