IHEP LGAD Sensor Design for ATLAS HGTD

Dec 14, 2019, 3:24 PM
1m
POSTER - Sun: B1F-Meeting room#3, B2F-RAN1/2; Mon-Wed: B1F Meeting rooms #5-6 (International Conference Center Hiroshima)

POSTER - Sun: B1F-Meeting room#3, B2F-RAN1/2; Mon-Wed: B1F Meeting rooms #5-6

International Conference Center Hiroshima

Peace Memorial Park, Hiroshima-shi
POSTER New ideas and future applications POSTER

Speakers

Kewei Wu (Chinese Academy of Sciences (CN)) Mei Zhao (Chinese Academy of Sciences (CN))

Description

The IHEP HGTD group has recently developed their first version LGAD sensor. Electrical Characterization TCAD Simulation was tuned to get simultaneously high breakdown voltage and proper gain. N-JTE and P-stop are the critical structures to guarantee high breakdown voltage. The gain layer was optimized for proper gain factor and hence good time resolution. Fabrication process simulation was also performed. Thermal growing oxide process is included for improved irradiation performance. Carbon implantation, high energy injection and low resistance simulation are added in the second version design.

Submission declaration Original and unpublished

Primary author

Kewei Wu (Chinese Academy of Sciences (CN))

Co-author

Mei Zhao (Chinese Academy of Sciences (CN))

Presentation materials