Speaker
Dr
Giovanni Paternoster
(Fondazione Bruno Kessler)
Description
Trench-Isolated LGAD (TI-LGAD) is a novel LGAD design where the standard inter-pixel isolating structure has been replaced with a trench, physically etched in the silicon and filled with a dielectric material.
The first TI-LGAD samples with 250 µm pitch have been produced at FBK and characterized with I-Vs and C-Vs analysis. In this contribution, we will discuss the technology design and the main results from the electrical characterization. We will present also the latest updates on the "RD50 TI-LGAD" project, an R&D project funded by RD50 and aimed at producing pixelated detectors, based on the TI-LGAD technology, with pixel and strips dimensions down to 50 µm.
Primary authors
Dr
Giovanni Paternoster
(Fondazione Bruno Kessler)
Giacomo Borghi
(Fondazione Bruno Kessler)
Matteo Centis Vignali
(FBK)
Francesco Ficorella
(FBK)
Alberto Gola
(Fondazione Bruno Kessler)
Pierluigi Bellutti
(FBK)
Maurizio Boscardin
(FBK Trento)
