Speaker
Enrico Giulio Villani
(Science and Technology Facilities Council STFC (GB))
Description
This project investigates radiation damage of epitaxial P type silicon.
Test structures consisting of Schottky diodes and pn junctions of different size and flavors are going to be fabricated at different facilities, including RAL and Carleton.
The structures are fabricated on a 50 um thick epitaxial layer of various P type doping: 1e13, 1e14, 1e15, 1e16, and 1e17 cm-3.
Up to 25 wafers / doping level of 6 inch size will be available for device fabrication.
Update on the design, simulation and initial fabrication phase will be given. Plans for the testing of the devices will also be discussed.
Primary authors
Enrico Giulio Villani
(Science and Technology Facilities Council STFC (GB))
Fergus Wilson
(Science and Technology Facilities Council STFC (GB))
Hongbo Zhu
(Chinese Academy of Sciences (CN))
Igor Mandic
(Jozef Stefan Institute (SI))
Steven Worm
(University of Birmingham)
