16th RD50 Workshop (Barcelona)

Session

Defect Characterization

31 May 2010, 11:00

Barcelona

7. Optimization of the priming procedure for Thermally Stimulated Currents with heavily irradiated silicon detectors

Prof. Mara Bruzzi (University of Florence, INFN), Dr Riccardo Mori (University of Florence, INFN)

31/05/2010, 11:00

Other topics

Talk

We report on the investigation of the radiation damage induced by neutron irradiation on both n- and p-type Magnetic Czochralski silicon pad detectors by the Thermally Stimulated Currents (TSC) technique. Detectors have been irradiated with fast neutrons in the range 1014-1016 n/cm2. Priming conditions have been studied in detail in order to investigate the residual electric field due to...

0. Cluster model in Si

Prof. Juozas Vaitkus (Vilnius University)

31/05/2010, 11:20

Defect and Material Characterization and Engineering

Talk

The analysis of photoconductivity, free carrier mobility and free carrier concentration time dependence allows to propose the cluster model that involeves the evaluation of a band structure around the cluster and the capture of both carriers. The density functional method was used for band structure simulation. Photoconductivity, Hall, magnetoresistance and Photo Hall effects dependence on...

8. Evaluation of fluence dependent variations of capacitance and generation current parameters by transient technique

Dr Eugenijus Gaubas (Inst. of Applied Research Vilnius University)

31/05/2010, 11:40

Evaluation of fluence dependent variations of capacitance and generation current parameters by transient technique E.Gaubas, T.Ceponis, A.Uleckas, S.Sakalauskas, and J.Vaitkus A transient technique for barrier evaluation by linearily increased voltage (BELIV) is presented. Variations of current transients under reverse and forward LIV biased pad-detectors, irradiated by reactor neutrons...

5. High-resolution photoinduced transient spectroscopy of defect centers in epitaxial silicon irradiated with high proton fluences

Pawel Kaminski (Institute of Electronic Materials Technology)

31/05/2010, 12:00

Other topics

Talk

High-resolution photoinduced transient spectroscopy (HRPITS) has been used to imaging defect structure of n-type epitaxial layers using as active layers of pad detectors irradiated with 24 GeV/c protons. The effect of increasing fluence from 1.0x10^16 cm^-2 to 1.7x10^16 cm^-2 on parameters and concentrations of radiation defect centers in standard and oxygenated epilayers has been studied. In...

9. Study of dominant recombination defects by fluence dependent variations of carrier lifetimes and drift parameters in MCZ Si wafers and pad-detectors

Dr Eugenijus Gaubas (Inst. of Appl. Res. (IMSAR)-Vilnius University)

31/05/2010, 12:20

Talk

Study of dominant recombination defects by fluence dependent variations of carrier lifetimes and drift parameters in MCZ Si wafers and pad-detectors E.Gaubas, T.Ceponis, A.Uleckas, J.Vaitkus, E.Zasinas, and J.Raisanen Fluence-dependent variations of carrier recombination and drift parameters, measured by microwave probed photoconductivity (MW-PCD), charge collection transients (ChCT) and...

27. Summary report of the WODEAN meeting at Bucharest, 13-14 May 2010

Mr Eckhart Fretwurst (Hamburg University)

31/05/2010, 14:30

Defect and Material Characterization and Engineering

The WODEAN meeting was hosted by the National Institute of Materials Physics NIMP at Bucharest. During the two days workshop the program was subdivided into 3 sessions with 19 talks in total. The first session was devoted to recent results about the “Impact of defects on radiation tolerance”, the second one to “Defect analysis by various methods” and the third one to “Modeling”. Some selected...

25. Detailed studies on the E4/E5-defect as main current generator

alexandra junkes (Hamburg University)

31/05/2010, 15:00

This work focuses on the E5-defect which is known to be the main current generator after hadron irradiation. Two aspects were studied, on the one hand the assignment of the defect level with V3. We show a correlation between the annealing behaviour of E5 and the generation of L-defect, supporting the idea that E5 is V3 and L-defect is V3O. Additionally we compare the result to the...

16. Photoresponse spectrum in differently irradiated and annealed Si

Prof. Juozas Vaitkus (Vilnius University)

31/05/2010, 15:20

Defect and Material Characterization and Engineering

Talk

The experimental results of photoconductivity response spectra in different samples (irradiation and low temperature annealing) are summarized and a set of optical activavtion energies is determined. The photoresponse was measured by instantaneous excitation and by excitation by 40 fs pulse generated by the tunable laser. The photoconductivity origin is analyzed taking into account the deep...

31. discussion on Defect Characterization

Eckhart FRETWURST

31/05/2010, 15:40