July 28, 2020 to August 6, 2020
virtual conference
Europe/Prague timezone

Proton and x-ray irradiation of silicon devices at the TIFPA-INFN facilities in Trento (Italy)

Jul 29, 2020, 7:40 PM
virtual conference

virtual conference

Talk 11. Accelerator: Physics, Performance, and R&D for Future Facilities Accelerator: Physics, Performance, and R&D for Future Facilities


Dr Benedetto Di Ruzza (TIFPA-INFN (Italy))


Proton and x-ray irradiation are essential procedure required to characterize the effects of TID and displacement damage designing silicon sensors for charged particle.
A The experimental area of a new new medical facility located in Trento (Italy) allow to perform irradiation on silicon pixel sensors, SiPM, and experimental electronic devices using protons with energy in the range of 70-230 MeV. The irradiation isocenter is in air, the circular beam spot can achieve a radius up to 3 cm with both uniform or gaussian profiles and a fluence up to 10^13 protons/cm^2. This energy range is especially suitable for testing devices oriented to medical and space applications, but is also useful for high-energy detector upgrades. In the TIFPA-INFN laboratories is located also a tungsten anode x-ray source allowing a complete characterization of experimental silicon devices.
In this talk will be described the experimental area of the Trento proton medical irradiation facility, and some results of the proton and x-ray irradiation on prototype sensors for charged particle.

Secondary track (number) 13

Primary author

Dr Benedetto Di Ruzza (TIFPA-INFN (Italy))

Presentation materials