36th RD50 Workshop (CERN - - online Workshop)

Session

Defect Characterization

3 Jun 2020, 10:00

31. Quantum characteristics of electron and hole quasiparticles in silicon defects

Prof. Darius Abramavicius (Institute of Chemical Physics, Vilnius University)

03/06/2020, 10:00

Charge recombination lifetime in a silicon wafer is directly proportional to the high energy particle (HEP) irradiation dose of a device. It is widely recognized that the dose of irradiation can be directly related to the density of defects. However, the microscopic picture of defects is highly inhomogeneous with several kinds of defects clustered along the path of HEPs. Electron and hole...

30. Electron mobility dependence on neutron and electron irradiation fluence in Si

Prof. Juozas Vaitkus (Vilnius University, Institute of Photonics and Nanotechnology)

03/06/2020, 10:20

There are presented the simulation of electron mobility dependence on concentration of different defects (ionized and neutral impurities, dipoles, clusters) according the known models and by TCAD Synopsys program (in the neutron irradiated Si).
The known and new experimental data compared with the simulation results.

15. Update on Radiation damage investigation of epitaxial P type Silicon using Schottky / pn junctions and LGAD - GaN activities at RAL

Enrico Giulio Villani (Science and Technology Facilities Council STFC (GB))

03/06/2020, 10:40

This project focuses on the investigation of radiation damage of epitaxial P type silicon.

Various test structures consisting of Schottky diodes and p junctions of different size and flavors are being fabricated at different facilities, including RAL, Carleton University and CNM.

The structures are fabricated on a 6 inch wafer of various doping (1e13, 1e14, 1e15, 1e16, and 1e17 B cm-3)...

38. DLTS and TSC techniques: A brief introduction

Anja Himmerlich (CERN)

03/06/2020, 11:20

Deep Level Transient Spectroscopy (DLTS) as well as Thermally Stimulated Current (TSC) technique are powerful tools for the characterisation of e.g. radiation induced deep level defects in silicon detectors. These techniques, that are based on the analysis of relaxation as well as emission processes after carrier injection, provide information about defect concentrations, thermal activation...

22. Defect characterization in boron doped silicon sensors after exposure to protons, neutrons and electrons

Yana Gurimskaya (CERN)

03/06/2020, 11:40

The radiation tolerance of 50 μm thin p-type Si epitaxial (EPI) devices differing in resistivity (initial Boron concentration) has been studied for 24 GeV/ c protons, reactor neutrons and 5.5 MeV electrons in the fluence range between 1E+10 cm^−2 and 1E+15 cm^−2 . The talk will summarize an update on characterisation and identification of the radiation-induced defects with a special focus to...

34. DLTS studies on as irradiated PiN diodes of different resistivity

Ioana Pintilie (NIMP Bucharest-Magurele, Romania)

03/06/2020, 12:00

We will report on the electrically active defects induced by hadron irradiation in p-type diodes processed on different materials (EPI and CZ) and of different resistivities. The generation of the defects and their electrical parameters (activation energy and capture cross sections) have been investigated by DLTS technique, in the framework of the RD50- Acceptor removal project. The defects'...

3. Discussion Session: Defect Characterization & Acceptor Removal

Ioana Pintilie (NIMP Bucharest-Magurele, Romania)

03/06/2020, 12:20

Discussion

37. Break