Charge recombination lifetime in a silicon wafer is directly proportional to the high energy particle (HEP) irradiation dose of a device. It is widely recognized that the dose of irradiation can be directly related to the density of defects. However, the microscopic picture of defects is highly inhomogeneous with several kinds of defects clustered along the path of HEPs. Electron and hole...
There are presented the simulation of electron mobility dependence on concentration of different defects (ionized and neutral impurities, dipoles, clusters) according the known models and by TCAD Synopsys program (in the neutron irradiated Si).
The known and new experimental data compared with the simulation results.
This project focuses on the investigation of radiation damage of epitaxial P type silicon.
Various test structures consisting of Schottky diodes and p junctions of different size and flavors are being fabricated at different facilities, including RAL, Carleton University and CNM.
The structures are fabricated on a 6 inch wafer of various doping (1e13, 1e14, 1e15, 1e16, and 1e17 B cm-3)...
We will report on the electrically active defects induced by hadron irradiation in p-type diodes processed on different materials (EPI and CZ) and of different resistivities. The generation of the defects and their electrical parameters (activation energy and capture cross sections) have been investigated by DLTS technique, in the framework of the RD50- Acceptor removal project. The defects'...
