Nov 15 – 19, 2021
Fukuoka Convention Center
Asia/Tokyo timezone

Adaptive Element Equivalent Circuit of No-Insulation High Temperature Superconductor Coil Containing Multiple Defects

THU-PO3-707-01
Nov 18, 2021, 10:00 AM
2h
Fukuoka Convention Center

Fukuoka Convention Center

Speaker

Mr Soobin An (Seoul National University)

Description

Previously we reported our new circuit model, named as “B model”, for fast and effective simulation of a no-insulation (NI) high temperature superconductor (HTS) coil having a “single” defect. A primary benefit of the “B model” over the conventional distributed network model is to use only “five segments” of the defect-existing turn in an NI HTS coil, while a substantially larger number of turn segments is commonly required to the conventional network model. As a sequel to our previous study, here we report an upgraded version of our B model, named as “Adaptive B model”, for simulation of an NI HTS coil having “multiple” defects. To validate our new model, an NI HTS coil having 3 or more defects was constructed and its electromagnetic responses were measured for comparison with calculated results by use of our new model. For further verification, we also performed the comparison of simulation results between our new Adaptive B model and the conventional distributed model.

Acknowledgement
This work was supported by Samsung Research Funding & Incubation Center of Samsung Electronics under Project Number SRFC-IT1801-09.

Primary author

Mr Soobin An (Seoul National University)

Co-authors

Chaemin Im (Seoul National University) Mr Geonyoung Kim (Seoul National University) Seungyong Hahn (Seoul National University)

Presentation materials

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