15–19 Nov 2021
Fukuoka Convention Center
Asia/Tokyo timezone

A novel cryogenic model for SiC MOSFET

THU-PO3-803-01
18 Nov 2021, 10:00
2h
Fukuoka Convention Center

Fukuoka Convention Center

Speaker

Wenyong Guo (Institute of Electrical Engineering, Chinese Academy of Science)

Description

Power electronic devices are typically utilized to provide quench protection for the superconducting magnets. Integrating quench protection devices in the Dewar can make the system more compact. The cryogenic characteristics of the power electronic device are therefore necessary to be studied in order to ensure that it can work properly under the low-temperature condition. The characteristics of power electronic devices, especially the threshold voltage, leakage current, and on-resistance, change significantly with temperature. Based on the typical structure, this paper analyzes the physical characteristics of several commercial SiC MOSFETs. The effect of temperature on SiO2/SiC interface is studied. Furthermore, a novel cryogenic model of MOSFET at low temperature is proposed, which is more suitable for a wide temperature range.

Primary authors

Ms Chenyu Tian Wenyong Guo (Institute of Electrical Engineering, Chinese Academy of Science) Mr Wenju Sang Mr Yang Cai Mr Suhang Yu Mr Liye Xiao

Presentation materials

There are no materials yet.