Speaker
Marta Tornago
(Universita e INFN Torino (IT))
Description
Ultra-Fast Silicon Detectors (UFSD) are sensors based on the LGAD technology and designed to achieve concurrent precise timing and position measurements.
In the past 5 years, an intense R&D program has been carried out at FBK-Trento to optimize the design of UFSD, exploring specific features such as the gain layer design, radiation hardness, time resolution, production uniformity, and interpad distance. In this contribution, we present results on the above points from the latest FBK production, UFSD3.2. UFSD3.2 consists of 19 wafers of different thicknesses, from 25 to 55 micron, with shallow and deep gain implants, co-implanted with different carbon doses to maximize radiation hardness.
| TIPP2020 abstract resubmission? | No, this is an entirely new submission. |
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Primary authors
Marta Tornago
(Universita e INFN Torino (IT))
Roberta Arcidiacono
(Universita e INFN Torino (IT))
Marco Costa
(Universita e INFN Torino (IT))
Valentina Sola
(Universita e INFN Torino (IT))
Marco Ferrero
(Universita e INFN Torino (IT))
Marco Mandurrino
(INFN)
Federico Siviero
(Universita e INFN Torino (IT))
Matteo V Meth Milanesio
Maurizio Boscardin
(FBK Trento)
Giovanni Paternoster
(Fondazione Bruno KEssler)
Giacomo Borghi
(Fondazione Bruno Kessler)
Matteo Centis Vignali
(FBK)
Gian-Franco Dalla Betta
(INFN and University of Trento)
Luca Menzio
(Università degli Studi di Torino)
Dr
Omar Hammad Ali
(FBK)
Amedeo Staiano
(Universita e INFN Torino (IT))
Francesco Ficorella
Co-author
Nicolo Cartiglia
(INFN Torino (IT))
