We describe the fabrication and characterization of semi-insulating GaN devices for the detection of ionizing radiation with applications in high radiation environment. We present the DC characterization and the signal response from Am-241 α-source of such device. The detector prototypes show up to 80% charge collection efficiency with bias voltages as low as -40V. Wide band gap semiconductors like synthetic diamond, GaN, SiC have gained immense importance in the field of charged particle detection due to their low intrinsic noise and high radiation tolerance. We have made interdigitated metal-semiconductor-metal(MSM) device on a 3µm thick GaN layer epitaxially grown on sapphire substrate by MOCVD technique. We employed Ni/Pt/Au metal stack for Schottky contact with finger width of 4µm, spacing of 8µm and finger length of 120µm. Details of the experimental setup for fabrication and characterization will be presented.
|TIPP2020 abstract resubmission?||No, this is an entirely new submission.|