An upgrade of the ATLAS detector system is foreseen for the High Luminosity phase of the LHC accelerator (HL-LHC) which will start operations in 2027. The present inner detector will be replaced by a new full-silicon Inner Tracker (ITk) designed to face the challenges posed by the large particle multiplicity and the extreme radiation environment at HL-LHC. The innermost part of the ITk, the...
The Upstream Tracker is a four-layer silicon strip detector positioned upstream of the dipole magnet. It is a key sub-detector for charged particle tracking, capable to provide fast track momentum information, essential for the software based trigger. We will discuss the detector design, based on silicon strip sensors, which features embedded pitch adapters and top-side biasing. The sensors...
Proton induced Ionizing and Non-Ionizing energy loss campaigns are required studies for silicon sensors and electronic devices qualification when designed for medical, space and high energy physics applications.
The Experimental Area of the Trento Proton Therapy Center offers the possibility to perform these studies using a 70-230 MeV proton beam designed for medical treatment of...
Upgrades to existing particle physics detectors as well as future experiments in high-energy physics will continue to employ silicon sensors as central tracking elements, with an ever larger area covered by the silicon sensors. Already now, the sensors are a main cost driver. In addition, they are available from only a very small number of manufacturers in the quantities required. Therefore,...
The hybrid pixel detectors of the ATLAS and CMS experiments will be replaced for the operation at the HL-LHC in 2026. To maintain the tracking performance, the surface area of the future detectors will significantly increase while the pixel pitch decreases.
An attractive option for the production of the pixel sensors in such large area detectors is the utilization of a CMOS processing line....
During investigations of the signal composition in silicon strip sensors, that were irradiated and annealed until the occurrence of charge multiplication, it was observed that charge carriers created previously have effects on the subsequent signal. This lead to the conclusion that drifting charge left the sensor in a meta-stable state.
Using the Edge- and Top- Transient Current technique the...
With the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), the Compact Muon Solenoid (CMS) experiment is foreseen to collect an integrated luminosity of 3000 or even 4000 fb$^{-1}$. This comes with up to 200 proton-proton collisions per bunch crossing and correspondingly a high multiplicity of particle tracks. For 3000 fb$^{-1}$, the upgraded CMS Inner Tracker will have to...
The charge collection of three $150 \; \mu \text{m}$ thick $\text{n}^+\text{p}\text{p}^+$ pad diodes has been scanned along the diode thickness using a $4.2 \; \text{GeV}$ electron beam at the DESY II beam test facility. The electron beam enters from the sensor edge and its position along the edge was reconstructed by three planes of a EUDET-type telescope. Compared to the conventional...
The RD50-CMOS groups aims to design and study High Voltage CMOS (HV-CMOS) chips for use in a high radiation environment. Currently, measurements are performed on the RD50-MPW2 chip, the second prototype developed by the RD50-CMOS group. Those measurements are discussed in this talk.
The active matrix of the RD50 HV-CMOS MPW2 prototype consists of 8x8 pixels with analogue frontend only. While...
Monolithic High Voltage-CMOS (HV-CMOS) sensors are emerging as a prime candidate for tracking systems in future physics experiments. They are designed to be suitable for these challenging environments by integrating the sensing diode and readout ASIC in a single layer of silicon allowing for high bias voltages and using high resistivity substrates. This results in thin detectors with fast...
The ARCADIA collaboration is developing Monolithic Active Pixel Sensors (MAPS) with an innovative sensor design, that uses a proprietary processing of the back side to improve the charge collection efficiency and timing over a wide range of operational and environmental conditions. The sensor design targets very low power consumption, of the order of 20 mW cm$^{-2}$ at 100 MHz cm$^{-2}$ hit...
In this work the results of several device-level simulations, carried out with the state-of-the-art Synopsys Sentaurus Technology CAD (TCAD) tool, of non-irradiated and irradiated Low-Gain Avalanche Diode (LGAD) detectors will be presented. Thanks to the intrinsic multiplication of the charge within these silicon sensors, it is possible to improve the signal to noise ratio thus limiting its...
Radiation tolerance for fluences exceeding 2-3 × 10$^{15}$ n$_{eq}$/cm$^{2}$ in current Low Gain Avalanche Diodes (LGAD) and other intrinsic gain silicon devices, is highly compromised due to gain layer de-activation. Previous studies using Carbon co-implantation or Gallium at the gain layer, have already demonstrated a 20 % improvement and a 20 % degradation respectively. Use of Indium, an...
Monolithic silicon sensors have become increasingly popular in the particle and applied physics community as a viable alternative to hybrid sensors for charged particle detection. In the framework of the INFN ARCADIA project, we have developed 10 um pitch Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) to transfer the monolithic approach to microstrip detectors, with the aim of...
An overview of the response of p-type silicon sensors to non-ionizing energy loss, accompanied by a new simulation of these effects, is presented. Silicon detection is a mature technology for registering the passage of charged particles. At the same time it continues to evolve toward increasing radiation tolerance as well as precision and adaptability. For these reasons it is likely to remain...
Hybrid pixel detector modules are the basic building blocks of vertex detectors in HEP as well as solid state detector cameras for x-ray imaging. A pixelated sensor chip, made of silicon or III/V semiconductor, is connected to one or more electronic readout chips by thousands of electrically conductive interconnect structures.
The talk will give an introduction in the interconnection and...
3D integration technologies have generated a wide interest in the pixel sensors and front-end electronics communities. They have the potential to lead to the fabrication of multilayer high performance devices with no dead area, where each layer is optimized for its function (particle sensing, analog signal amplification and filtering, digital memory and readout, silicon photonics,..). Recent...
An alternative pixel-detector hybridization technology based on Anisotropic Conductive Films (ACF) is under development to replace the conventional fine-pitch flip-chip bump bonding. The new process takes advantage of the recent progress in industrial applications of ACF and is suitable for time- and cost-effective in-house processing of single devices. This new bonding technique developed can...
The Moore’s law, which governs the development of microelectronics for 50 years, is nearly ending due do its physical limits at the 2nm or 1nm technology nodes. In order to improve the device performance and for reducing the signal latency and the power consumption, the semiconductor industry has focused its efforts for stacking wafer on wafer, die on wafer, and die on die. This paper will...
In the last decade, 3D integration technologies have been driving important developments in CMOS microelectronics like memories and CMOS image sensors. They allowed an increase in the integration level of electronics components as well as the implementation of new functionalities.
In the framework of the IPCEI project (Important Projects of Common European Interest), Fondazione Bruno Kessler...
The Phase-II upgrades of ATLAS and CMS will require a new tracker with readout electronics operating in extremely harsh radiation environment and high data rate readout.
The RD53 collaboration is a joint effort between the ATLAS and CMS experiments facing the challenges of developing hybrid pixel readout chips for the upgrades of the pixel detectors of both experiments.
A large size...
A prototype chip integrating a matrix of 16 × 16 readout channels has been designed and tested in the framework of the RD53 developments for pixel detectors at the High-Luminosity LHC. The matrix is divided in two regions featuring different flavours of the front-end stage, or Linear front-end, that have been tested and compared. The front-end channels include a low-noise charge sensitive...
We present a prototype ASIC solution for vertex detectors of the next generation of colliders, where high resolution in both space and time measurements will be mandatory requirements in order to cope with the huge number of tracks per event to be detected and processed. The ASIC, named Timespot1, designed in CMOS 28-nm technology and featuring a 32x32 pixel matrix with a 55 µm pitch, is...
The adoption of monolithic active pixel particle detectors in space missions is obstructed by a number of technical challenges involving power dissipation, mechanics and material budget.
This work presents a sparse readout architecture for the 3-layers particle tracker, based of the ALPIDE MAPS chip, under development for the HEPD-02 instrument.
With a total of 150 APIDE chips and the...
Low Gain Avalanche Detectors (LGADs) is one of the most promising sensing technologies for future 4D-tracking applications and recently it has been qualified to be used in the ATLAS and CMS timing detectors for the HL-LCH upgrade. LGADs are able to achieve an excellent timing performance by the presence of an internal gain that improves the signal-to-noise ratio leading to a better time...
The forward region of the CMS MIP Timing Detector, proposed for the HL-LHC
upgrade, will be instrumented with timing detectors based on LGAD technology.
Devices from two different producers, Hamamatsu Photonics (HPK2 campaign) and
CNM-IMB (within the framework of AIDA 2020), tested by 3 different institutes
(CERN, IFCA-CSIC and UZH) are presented in this talk. Electrical...
A new Ultra-Fast Silicon Detectors production (UFSD3.2) has been produced
by Fondazione Bruno Kessler (FBK) in Trento, in collaboration with
University of Trento and National Institute of Nuclear Physics in Turin
(INFN); this production aims to improve the radiation resistance of the
multiplication layer (gain implant).
Previous FBK-UFSD productions (UFSD2 and UFSD3) demonstrated that...
Low Gain Avalanche Detectors (LGADs) are thin silicon detectors (ranging from 20 to 50 um in thickness) with moderate internal signal amplification (up to a gain of ~50) [1]. LGADs are capable of providing measurements of minimum-ionizing particles with time resolution as good as 17 pico-seconds [2]. In addition, the fast rise time (~500ps) and short full charge collection time (~1ns) of LGADs...
Low Gain Avalanche Detectors (LGADs) are thin silicon detectors (ranging from 20 to 50 um in thickness) with moderate internal signal amplification (up to a gain of ~50) [1]. LGADs are capable of providing measurements of minimum-ionizing particles with time resolution as good as 17 pico-seconds [2], [3]. In addition, the fast rise time (as low as 150 ps) and short full charge collection time...
We present the performance of the USTC-1 LGADs which are designed by the USTC and fabricated at the IME (Institute of Microelectronics ,CAS). The LGADs are made with five 8-inch wafers with 1x1, 2x2, 5x5, and 15x15 arrays with 50 μm active thickness according to the specification of the ATLAS HGTD project. Different peripheral region designs are attempted and the gain layer energy and dose are...
The Single Event Effects (SEE) at large energy deposits in LGADs and PINs operated at extreme electric fields are studied at ELI Beamlines. The outcomes of conducted studies based on fs-laser TCT-SPA/TPA will be presented.
Fluences covered are the ones of interest for ATLAS and CMS: 4e14, 8e14, 1.5e15, 2.5e15 cm-2.
The future steps will be discussed too,
In this contribution, I will present the characterization of the latest LGAD production manufactured at FBK (UFSD3.2), performed with the β-source (Sr90) setup of the Torino Silicon Lab (INFN – University of Torino).
The UFSD3.2 production features a wide range of designs: the tested sensors have four different active thicknesses (25, 35, 45, 55 μm), different splits of Gain Layer dopings...
Using test-beam data on 80-120 GeV pion beams, a study of LGAD mortality is presented for neutron and proton irradiated samples for fluences up to 6e15n$_{eq}$/cm$^{2}$. An empirical model is established for estimating maximum safe operating voltage point and a link is demonstrated between bias voltage and beam-related damage. Comparisons are performed with similar operating points at...
We present a detection system with high sensitivity and efficiency specially designed to exploit the potentials of X-ray absorption spectroscopy in fluorescence mode. It consists of 8 monolithic multipixel arrays, each with 8 (SDD) cells with a total area of 570 mm$^2$. Optimized to work in an energy range of 3-30 keV, this 64 channels integrated detection system includes ultra-low noise...
Silicon Photomultipliers are array of many single-photon avalanche diodes (SPAD) connected in parallel to common anode and cathode, each with an integrated quenching resistor. Each pixel is sensitive to a single photon, working in Geiger-mode, with high internal electric fields to trigger self-sustaining avalanche multiplication processes. They are emerging as detector of choice in many...
Silicon Carbide (SiC) is a compound semiconductor, which is considered as a possible alternative to silicon for particles and photon detection. Its characteristics make it very promising for the next generation of nuclear and particle physics experiments at high beam luminosity.
Silicon carbide shows a large variation in crystal lattices according to the stacking sequence of the atoms in...
3D pixel sensors will be used for the innermost layer (L0) of the ATLAS ITk detector at High Luminosity LHC. The pixel size will be either 25 µm x 100 µm (barrel, central part of L0) or 50 µm x 50 µm (endcap, lateral rings). Sensor wafers with 150 µm active thickness have been produced by FBK in collaboration with INFN. Several sensors were bump bonded to RD53A read-out chips at Leonardo and...
The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) will require new high-radiation tolerant silicon pixel sensors for the innermost layers of the CMS experiment tracking detectors, capable of withstanding fluences up to 2.3E16 neq/cm2 (1MeV equivalent neutrons). Results obtained in beam test experiments with FBK planar and 3D pixel sensors interconnected with the RD53A...
The inner detector of the ATLAS experiment will be replaced by a completely new Inner Tracker (ITk) to exploit the performance of the High Luminosity upgrade of the LHC accelerator (HL-LHC). The new tracker will have to operate in an unprecedented radiation environment. In particular, the hybrid pixel detectors of the innermost layer of the ITk will need to survive a particle fluence of about...
We report on the measurements of time resolution for double-sided 3D pixel sensors with a single cell of 50 $\mu$m $\times$ 50 $\mu$m and thickness of 285 $\mu$m, fabricated at IMB-CNM and irradiated with reactor neutrons to 8e14 MeV n$_{eq}$/cm$^2$ and then to 2.3e15 MeV n$_{eq}$/cm$^2$. Measurements were conducted using a radioactive source at a temperature of -20 and 20 \textdegree C in a...
In order to cope with the high luminosity phase conditions at the LHC experiments, the development of detectors with enhanced time resolution and radiation hardness is required. TimeSPOT, an INFN-funded project, has developed 3D-trench silicon pixel sensors able to achieve a very good time resolution for minimum ionizing particles. In 2019, these sensors were tested for the first time on a...
For the operations during the High Luminosity phase of LHC, dedicated studies have shown that new vertex detectors with single-hit time resolutions in the range from 10 to 50 picoseconds will allow to recover the current tracking and vertexing capabilities. The TimeSPOT project has developed 3D trench-based silicon pixel sensors with a time resolution in the range of 20 ps. To carefully study...
