Speaker
Description
In the last decade, 3D integration technologies have been driving important developments in CMOS microelectronics like memories and CMOS image sensors. They allowed an increase in the integration level of electronics components as well as the implementation of new functionalities.
In the framework of the IPCEI project (Important Projects of Common European Interest), Fondazione Bruno Kessler is acquiring new capabilities for the microfabrication of 3d integrated sensors. The aim of the project is to develop innovative radiation and optical sensors by integrating the most recent technologies for 3d integration to the more standard sensor technologies (SiPM, LGAD, pin detectors). The result of this integration would lead to a new generation of radiation sensors with enhanced performance and additional functionalities that cope with the new requirements coming from the HEP and medical imaging communities.
In this contribution, we present the latest results on backside-illuminated SiPM and Through Silicon Vias (TSV) for interconnecting the current analog sensors to digital read-out electronics. The FBK R&D roadmap for the next years on 3D integrated radiation sensors is also presented.
