Speaker
Description
In high-energy physics, upgrades for particle detectors and studies on future particle detectors are largely based on silicon sensors as tracking devices. Consequently, there is a need to investigate silicon sensor concepts that offer large-area coverage and cost-efficiency.
Sensors based on the CMOS imaging technology present such an alternative silicon sensor concept for tracking detectors. As this technology is a standardised industry process it can provide a lowered sensor cost, as well as access to fast and large-scale production from a variety of vendors.
The CMOS Strips project is investigating passive CMOS strip sensors fabricated by LFoundry in a 150 nm technology. By employing the technique of stitching two different strip formats of the sensor have been realised. Besides, the strip design varies in doping concentration and width of the strip implant to study various depletion concepts and electric field configurations.
Unirradiated and irradiated samples have been characterised by probe station measurements and test beam campaigns for the different sensor designs. In addition, the detector response was simulated based on Monte Carlo methods and electric fields provided by TCAD Device simulations.
This contribution provides an overview of sensor characterisation measurements and studies on the hit detection efficiency, spatial resolution and noise of the strip sensors. The simulated detector response is presented and compared to test beam data. Furthermore, an outlook on the next sensor submission of the CMOS Strips project is given.
| Submission declaration | Original and unplublished |
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