13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD13), Vancouver, Canada

Performance of CMOS pixel detector IU233N5-Z damaged with 200 MeV proton beam

Not scheduled

20m

Conference room (Wosk Centre)

Poster Radiation damage and radiation tolerant materials

Speaker

Hiromitsu Takahashi

Description

CMOS pixel detectors have a fine pixel size of 1-10 $\mu$m and are planned to use in X-ray astrophysical observations. ~100 MeV protons inside South Atlantic anomaly dominate the radiation damages for the detectors onboard satellites. We irradiated 10 Gy of 200 MeV protons (~1.6$\times10^{10}$ /cm$^{-2}$ 1 MeV neutron equivalent) to the CMOS detector IU233N5-Z, which is an optical sensor but also has X-ray sensitivity. Although the number of hot pixels was increased, We still observed line features of $^{241}$Am source. We will present the performance comparison before/after the proton irradiation.