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25th RD50 Workshop (CERN)

19–21 Nov 2014
CERN
Europe/Zurich timezone

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Status of Silicon Strip Sensor Measurements at Liverpool

19 Nov 2014, 14:35
20m
500/1-001 - Main Auditorium (CERN)

500/1-001 - Main Auditorium

CERN

503-1-001 (Council Chamber) on 19th Nov ; 500-1-001(Main auditorium) on 20th in the morning and 4-3-006 (TH auditorium) in the afternoon; 500-1-001(Main auditorium) on 21st Nov.
400
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Speaker

Sven Wonsak (University of Liverpool (GB))

Description

Dedicated RD50 charge multiplication sensors were annealed at room temperature and charge collection measurements were performed after several annealing steps. The multiplication sensors feature different structures specially designed to take advantage of multiplication after heavy irradiation. These devices were produced by Micron Semiconductor Ltd and irradiated with neutrons to fluences of 1e15 and 5e15 neq/cm2. Some of these sensors were used to investigate the collected charge during constant biasing of the sensor. Miniature silicon strip detectors (~1x1cm) with different thicknesses from Hamamatsu K.K. and Micron Semiconductor Ltd. were irradiated at Birmingham and Ljubljana with doses up to 2e16 neq/cm2. IV measurements were performed at different temperatures for the determination of the effective energy Eg and the current related damage rate alpha.

Author

Sven Wonsak (University of Liverpool (GB))

Co-authors

Gianluigi Casse (University of Liverpool (GB)) Ilya Tsurin (University of Liverpool (GB)) Michael Wormald (University of Liverpool (GB)) Paul Dervan (University of Liverpool (GB)) Dr Tony Affolder (University of Liverpool (GB))

Presentation materials

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