Sep 25 – 29, 2006
Valencia, Spain
Europe/Zurich timezone

Development of a CMOS SOI pixel detector

Sep 28, 2006, 12:35 PM
25m
Valencia, Spain

Valencia, Spain

IFIC – Instituto de Fisica Corpuscular Edificio Institutos de Investgación Apartado de Correos 22085 E-46071 València SPAIN

Speaker

Hirokazu Ishino (Tokyo Institute of Technology)

Description

We are developing a monolithic radiation pixel detector using silicon on insulator (SOI) with a commercial 0.15um fully-depleted-SOI technology and a Czochralski high resistivity silicon substrate in place of a handle wafer. Nine types of SOI TEG chips with a size of 2.5 x 2.5 mm^2 consisting of 20um pixels have been designed and manufactured. The I-V measurement, a laser light detection test and a circuit test prove that the TEG chips function properly. We present basic performance of the detector as well as the comparison with simulation results. We also report the radiation effects on the TEG chips.

Summary

One of the most important topics in the current particle physics is
a search for Higgs particles and new physics beyond the standard model.
In the interactions involving the new particles, bottom and charm quarks and
a tau lepton play the essential role for the search.
A vertex detector placed near the beam colliding position enables
us to detect and measure the decay positions of the heavy quarks
and lepton precisely.
For example, LHC experiments employ a hybrid pixel detector (HPD)
which is a position sensitive silicon detector, a size of about 1cm x 1cm,
consisting of huge number of readout pixels of 0.1mm x 0.1mm,
each is connected to a readout LSI via a bump bonding.

For future collider experiments such as ILC, super LHC, super B factory,
further improvements of the spatial resolution and radiation hardness
are required, however.
The harsh requirements demand a novel vertex detector that is able to
overcome the difficulty in decreasing the pixel size and thickness,
and the bump bonding.
One of the candidates is a pixel detector making use of
the silicon on insulator (SOI) technology.

The ionizing radiation SOI detector consists of a high resistivity monolithic
Si layer in place of a handle wafer, a thickness of about 100um,
overlayed by a 0.2um insulating SiO2 layer
(Buried Oxide, BOX), and a thin Si film (device layer) over the BOX,
in which a readout LSI is formed.
The handle wafer is used for a radiation sensor with a matrix of
fully depleted diodes directly connected to the LSI through a hole in the BOX.

We are developing the SOI detector with a commercial 0.15um fully-depleted
SOI technology and a Czochralski high resistivity silicon substrate.
Nine types of SOI TEG chips with a size of 2.5mm x 2.5mm have been
designed and manufactured.
The I-V measurements, a laser light detection test and a circuit test
prove that the TEG chips function properly.
We report the basic performance of the detector as well as the comparison
with simulation results.

For the application of an SOI detector to high luminosity
collider experiments in future, we need understand its radiation effects.
Some of the TEG chips are irradiated by gamma rays and proton beams,
and total-dose and single-event effects on the chips are examined.
We also present the irradiation test results in terms of the threshold
voltage shift, mobility degradation, 1/f noise, sensor response on
the laser light and beta rays, and the single-event-upset.

Primary author

Hirokazu Ishino (Tokyo Institute of Technology)

Co-authors

Dr Elena Martin (University of Hawaii) Prof. Gary Varner (University of Hawaii) Prof. Hiro Tajima (Stanford Linear Accelerator Center) Prof. Hirokazu Ikeda (Japan Aerospace Exploration Agency) Prof. Kazuhiko Hara (University of Tsukuba) Prof. Osamu Tajima (High Energy Accelerator Research Organization (KEK)) Prof. Susumu Terada (High Energy Accelerator Research Organization (KEK)) Prof. Takeo Kawasaki (Niigata University) Prof. Toru Tsuboyama (High Energy Accelerator Research Organization (KEK)) Prof. Yasuo Arai (High Energy Accelerator Research Organization (KEK)) Prof. Yoichi Ikegami (High Energy Accelerator Research Organization (KEK)) Prof. Yutaka Ushiroda (High Energy Accelerator Research Organization (KEK)) Prof. yoshinobu Unno (High Energy Accelerator Research Organization (KEK))

Presentation materials