Sep 25 – 29, 2006
Valencia, Spain
Europe/Zurich timezone

Total Dose and Single Event Effects in a 0.25 m Silicon-On-Sapphire CMOS Technology

Sep 27, 2006, 4:20 PM
1h 40m
Valencia, Spain

Valencia, Spain

IFIC – Instituto de Fisica Corpuscular Edificio Institutos de Investgación Apartado de Correos 22085 E-46071 València SPAIN


Ping Gui (Southern Methodist University)


Silicon-On-Sapphire (SOS) CMOS technology has been attractive to radiation tolerant applications. The Sapphire substrate eliminates single-event latch-up (SEL) and reduces the possibility of single event upset (SEE), but the back-channel leakage current could cause problems to circuitry made in this technology. To better understand the radiation effects in this technology and evaluate its feasibility in applications such as Large Hadron Collider (LHC) experiments, we have developed a custom test chip containing various test structures of MOSFET devices and circuits using Peregrine Semiconductor’s 0.25m SOS CMOS technology. This paper presents the total ionization doze (TID) and SEE measurement result and characterization obtained through the chip.


Silicon-On-Sapphire (SOS) CMOS technology has been attractive for radiation tolerant
electronics. With the insolating sapphire substrate, this technology eliminates the
parasitic transistor in the bulk silicon substrate and hence removes the mechanism
for latch-ups. This insolating substrate also reduces the possibility of Single event
upset (SEU).
SOS technology, like any Silicon-on-insulator technology, does have another source of
leakage in the devices, in addition to the edge leakage — back channel leakage at the
interface of Sapphire and SiO2. The leakage could cause problems to circuitry since
no layout techniques can mitigate this effect. To better understand the radiation
effects in this technology and evaluate its feasibility in applications such as Large
Hadron Collider (LHC) experiments, we have developed a custom test chip using
Peregrine Semiconductor’s 0.25m SOS CMOS technology. We plan to characterize MOSFET
devices and circuitry fabricated with respect to TID and SEE.
The test chip contains various configurations of NMOS and PMOS devices,
ring-oscillators, resistors, digital standard cells, and D-Flip-flop (DFF) test
structures for SEE characterization.
A. Single transistors
The test-chip contains NMOS and PMOS devices with three different channel lengths
(W/L=10m/0.25m, W/L=10m/0.5m, and W/L=10m/1.0m). Each transistor is implemented
in four different types of layout: standard, edgeless, two-finger and four-finger.
Since backchannel leakage is proportional to the channel length, we have designed
transistors with different length to characterize the back-channel leakage current.
Edge leakage current is proportional to the number of edges in a transistor,
therefore the transistors laid out in standard (one-finger), two finger and
four-finger transistors can provide us information on the leakage current in
transistors without using edgeless layout.
B. Ring oscillator
The test chip contains three different types of ring oscillators to characterize the
effect of TID on circuit performance (speed) as well as power dissipation. The ring
oscillators include CMOS ring oscillators made of minimum-size inverters, both in
standard layout and edgeless layout, and ring oscillator made using current-mode logic.
C. Shift-registers
In order to characterize the single-event effect, we have designed multiple 32-stage
shift registers (DFFs) with various setup. The test structures include shift
registers with standard-layout, shift-registers with edge less layout, and shift
registers with majority-vote circuitry.
In addition, resistively hardened cells have been used extensively to make SRMs
rad-hard. In this test chip, we have designed shift-registers with different
resistors (1k, 2k, 4k, 8, 16k, 32k, 64k and 128k ohms) connected in the feedback path
of the latch to characterize the SEE of the latch and DFF cells.
D. Digital standard cells
The digital standard cells in the test chip include INVETTER, NAND, and NOR gates in
both standard and edgeless layout.
E. Current mirrors
we also put down matched current mirror structures in the test chip to characterize
possible leakage current in the current mirrors under different radiation levels.

We are currently working on the test bed development for the 0.25m SOS CMOS test
chip. The results will be presented at the workshop.

Primary author

Ping Gui (Southern Methodist University)


Andy Liu (Southern Methodist University) Anny Xiang (Southern Methodist University) Jingbo Ye (Southern Methodist University) John Yang (Southern Methodist University) Junheng Zhang (Southern Methodist University) Peiqing Zhu (Southern Methodist University) Ryszard Stroynowski (Southern Methodist University) Wickham Chen (Southern Methodist University)

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