Speaker
Jean-Francois Genat
(CNRS/IN2P3/LPNHE)
Description
For the years to come, Silicon strips detectors will be read using the smallest
available integrated technologies for room, transparency, and power considerations.
CMOS, Bipolar-CMOS and Silicon-Germanium are presently offered in deep-submicron
(250 down to 90nm) at affordable cost through worldwide integrated circuits
multiproject centers. As an example, a 180nm CMOS readout prototype chip has been
designed and tested, and gave satisfactory results in terms of noise and power.
Beam tests are under work, and prospectives in 130nm will be presented.
Authors
Jean-Francois Genat
(CNRS/IN2P3/LPNHE)
Thanh Hung Pham
(CNRS/IN2P3/LPNHE)
Co-authors
Dr
Aurore Savoy-Navarro
(CNRS/IN2P3/LPNHE)
Mr
Denis Fougeron
(CNRS/IN2P3/LAPP)
Mr
Herve Lebbolo
(CNRS/IN2P3/LPNHE)
Mr
Rachid Sefri
(CNRS/IN2P3/LPNHE)
Dr
Richard Hermel
(CNRS/IN2P3/LAPP)
Mr
Sebastien Vilalte
(CNRS/IN2P3/LAPP)
Dr
Yannis Karyotakis
(CNRS/IN2P3/LAPP)
