Sep 25 – 29, 2006
Valencia, Spain
Europe/Zurich timezone

Silicon strip readout using Deep-Submicron Technologies

Sep 28, 2006, 10:55 AM
Valencia, Spain

Valencia, Spain

IFIC – Instituto de Fisica Corpuscular Edificio Institutos de Investgación Apartado de Correos 22085 E-46071 València SPAIN


Jean-Francois Genat (CNRS/IN2P3/LPNHE)


For the years to come, Silicon strips detectors will be read using the smallest available integrated technologies for room, transparency, and power considerations. CMOS, Bipolar-CMOS and Silicon-Germanium are presently offered in deep-submicron (250 down to 90nm) at affordable cost through worldwide integrated circuits multiproject centers. As an example, a 180nm CMOS readout prototype chip has been designed and tested, and gave satisfactory results in terms of noise and power. Beam tests are under work, and prospectives in 130nm will be presented.

Primary authors

Jean-Francois Genat (CNRS/IN2P3/LPNHE) Thanh Hung Pham (CNRS/IN2P3/LPNHE)


Dr Aurore Savoy-Navarro (CNRS/IN2P3/LPNHE) Mr Denis Fougeron (CNRS/IN2P3/LAPP) Mr Herve Lebbolo (CNRS/IN2P3/LPNHE) Mr Rachid Sefri (CNRS/IN2P3/LPNHE) Dr Richard Hermel (CNRS/IN2P3/LAPP) Mr Sebastien Vilalte (CNRS/IN2P3/LAPP) Dr Yannis Karyotakis (CNRS/IN2P3/LAPP)

Presentation materials