22-27 September 2019
Hyatt Regency Hotel Vancouver
Canada/Pacific timezone

Mon-Mo-Po1.02-09 [21]: HTS magnetization current simulation using ANSYS iterative algorithm method and user defined element

23 Sep 2019, 09:15
2h
Level 2 Posters 1

Level 2 Posters 1

Speaker

Dr Kai Zhang (Paul Scherrer Institut)

Description

Kai Zhang, Sebastian Hellmann, Marco Calvi
Paul Scherrer Institut, Villigen, CH

Lucas Brouwer
Lawrence Berkeley National Laboratory, Berkeley, CA

Abstract – In this work, we will introduce the feasibility of using A-V formula in ANSYS to simulate the magnetization process of HTS bulk materials. The iterative algorithm method (IAM) based on ANSYS APDL is firstly developed to simulate the magnetization current issues in a ReBCO bulk disk based on Bean model. Specifically, we confirm it is feasible to simulate the development of trapped current density in the ReBCO bulk during the process of ramping and damping the external magnetic field. Using IAM, we can update the magnetic field-dependent critical current density for each element in the ReBCO bulk after each load step of electromagnetic analysis. It is also feasible to take the mechanical strain effects into consideration if we update the strain-related critical current density after each load step of electromagnetic-mechanical coupled analysis. Finally, a systematic study of HTS magnetization current issues is performed to test the newly developed ANSYS user defined element (UDE) in which E-J power law is defined. The flux creep effects of the ReBCO bulk during Field Cooling Magnetization (FCM) are investigated when using different n-values. The simulation results of using ANSYS IAM and UDE are compared with the simulation results of using COMSOL.

Primary authors

Dr Kai Zhang (Paul Scherrer Institut) Dr Sebastian Hellmann (Paul Scherrer Institut) Dr Marco Calvi (Paul Scherrer Institut) Dr Lucas Brouwer (Lawrence Berkeley National Laboratory)

Presentation Materials