Fabrication and its Performance of a Pixelated Silicon Sensor Integrated with JFET

Dec 14, 2019, 2:18 PM
1m
POSTER - Sun: B1F-Meeting room#3, B2F-RAN1/2; Mon-Wed: B1F Meeting rooms #5-6 (International Conference Center Hiroshima)

POSTER - Sun: B1F-Meeting room#3, B2F-RAN1/2; Mon-Wed: B1F Meeting rooms #5-6

International Conference Center Hiroshima

Peace Memorial Park, Hiroshima-shi
POSTER Pixel sensors for imaging POSTER

Speaker

Hwanbae Park (Kyungpook National University)

Description

In the previous Hiroshima symposium (HSTD11), we presented a detection concept of a pixelated silicon sensor integrated with junction field effect transistor (JFET), fabrication process flow charts of it, and simulation studies based on this detector concept. The JFET is designed to have the cylindrical structure and is used as a switch to readout charges accumulated in the pixelated sensor. We determine detector design parameters such as a distance between the source and the drain, a coverage region of the deep p-well implemented underneath the drain of the JFET, and doping concentration for the deep p-well. All pixels with one row are read in parallel and the next row is then selected by the gate voltage after finishing the reading one row. The photon detection efficiency of the silicon at low energy X-ray is very high so that this detection can be used for direct irradiation method, and the thickness of the active silicon should be twice of the absorption length of the silicon at that energy. We fabricate a pixelated silicon sensor integrated with JFET using a 625 um-thick, high resistivity (> 5 kohm*cm) n-type and double-sided polished 6-in silicon wafer. In this poster we present electrical characteristics of the fabricated sensors and the drain currents as a function of the drain voltage for different the gate voltages. We also present the optimized design parameters of the prototype sensor to demonstrate the proper functioning of the switch.

Submission declaration Original and unpublished

Primary authors

Dr Hyeyoung Lee (Center for Underground Physics (CUP), Institute for Basic Science (IBS)) Hwanbae Park (Kyungpook National University)

Co-authors

Mr Jinyong Kim (Kyungpook National University) Dr Manwoo Lee (Dongnam Inst. of Radiological and Medical Sciences) Mr Seungcheol Lee (Kyungpook National University) Mr Seokjoon Song (Kyungpook National University)

Presentation materials