Recent breakthroughs in electrical detection and manipulation of antiferromagnets have
opened a new avenue in the research of non-volatile spintronic devices. Antiparallel spins in
antiferromagnets lead to the insensitivity to magnetic field perturbations, multi-level stability
and ultra-fast spin dynamics, which is also a major experimental challenge . In this
contribution we show how the know-how that we achieved in the pump-probe study of spin
transport in non-magnetic heterostructures AlGaAs/GaAs , diluted ferromagnetic
semiconductor (Ga,Mn)As  or terahertz magneto-resistance  can be transferred to the
research of antiferromagnetic metal CuMnAs. In particular, we show the latest progress in
studies of magnetic anisotropy , dynamics of heat dissipation  and even switching of
memory devices by single femtosecond laser pulse  or terahertz excitation .
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