7–10 Sept 2020
Europe/Zurich timezone
20. konference českých a slovenských fyziků

IMPACT OF MACROSCOPIC PARTICLE COMPOSITION ON GAN EPITAXIAL GROWTH MORPHOLOGY AND LUMINESCENCE

10 Sept 2020, 14:10
20m
lecture hall T2 (building A)

lecture hall T2

building A

Speaker

Kuldová K. (Institute of Physics CAS, Prague)

Description

We describe macroscopic defects on InGaN/GaN multiple quantum well structures caused by
accidental contamination with dust particles during the metalorganic vapour phase epitaxy.
Gallium nitride and InGaN/GaN heterostructures are promising materials for many
optoelectronic devices, such as light emitters, high-power and high-frequency electronics,
detectors of ionizing radiation, scintillators. During the preparation of these structures, great
attention is paid to optimization of the growth parameters and to reduce the density of
dislocations and point defects in this material. However, only a small number of studies were
performed on macroscopic defects due to particles fallen from the reactor chamber or
scratches from substrate polishing. Understanding the impact of each of the contaminating
elements is not only important for sample diagnostics, but it also provides insight into the
complex physical and chemical processes during epitaxy.We focus on the influence of
macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures
and present a Raman spectroscopy study of macroscopic defect containing regions of the
samples.

Primary author

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