Dr
Julien Mekki
(Universite Montpellier II)
01/06/2010, 09:00
Other topics
Talk
Aiming at evaluating new options for radiation monitoring sensors for LHC/SLHC experiments, the radiation responses of FZ and MCz silicon detectors of different geometry have been studied up to about 4×1014 neq/cm2.
Alexander Dierlamm
(Inst. fuer Experimentelle Kernphysik, KIT)
01/06/2010, 09:20
Pad Detector Characterization
Talk
This presentation will give an overview of the frequently used proton irradiation facility in Karlsruhe. The current infrastructure is described and recent calibrations discussed.
Dr
Anna Macchiolo
(MPI für Physik)
01/06/2010, 09:40
Pad Detector Characterization
Talk
Charge multiplication by impact ionisation is a well known effect in semiconductors. It is used for signal amplification in devices like APD (Avalanche photodiodes) and SiPMs (Silicon Photomultipliers). Such devices are developed and produced in the MPI Semiconductor lab. Based on this experience we can calculate and simulate impact ionisation effects in planar tracking detectors. The results...
Nicola Pacifico
(CERN)
01/06/2010, 10:00
Talk
An EDGE-TCT characterization bench was set-up at CERN. The setup is in a fully operational state, and further developments are close to completion, which should allow the application of this technique to non-prepared structures.
Robert Eber
(Karlsruhe Institute of Technology)
01/06/2010, 10:20
Pad Detector Characterization
Talk
The Setup around the ALiBaVa system in Karlsruhe is presented. Operational parameters are discussed. First measurements and Analysis with an irradiated FZ mini strip sensor are shown. Simulations for the understanding of the ALiBaVa and TCT setup are in progress.
Mr
Eduardo Del Castillo Sanchez
(Ministerio de Ciencia e Innovacion MICINN)
01/06/2010, 11:00
Talk
A study on p-type epitaxial silicon pad detectors with thicknesses 50 and 75 um is performed after proton irradiation up to 2.88e15 p/cm^2.
Samples with thickness 150 um are also studied, after proton and neutron irradiation up to 1.73e15 p/cm^2 and 1e15 n/cm^2 respectively.
Capacitance, leakage current and charge collected are measured as a function of biasing voltage. It is also used the...
Thomas Pöhlsen
(University of Hamburg)
01/06/2010, 11:20
Pad Detector Characterization
Talk
Type inverted epitaxial n-type silicon diodes with a thickness of 100 µm and 150 µm and fluences between 1E14 cm-2 and 4E15 cm-2 were investigated using the transient current technique (TCT) at temperatures between -40 °C and + 20 °C.
A simulation of charge collection could be used to determine the field dependent trapping time and the space charge distribution in the detector bulk....
Jörn Lange
(University of Hamburg)
01/06/2010, 11:40
Pad Detector Characterization
Charge collection efficiency (CCE) was measured in highly proton-irradiated 75, 100 and 150 µm thick n-type epitaxial silicon diodes of ST and DO material using the transient current technique (TCT) with 670 nm laser light. The dependence of charge multiplication on material, thickness, annealing time and temperature was studied at an equivalent fluence of 1e16 1/cm².
Furthermore,...
Arie Ruzin
(Tel Aviv University)
01/06/2010, 12:00
Pad Detector Characterization
Contacts are often key components in high resistivity devices. Many textbooks describe in details Schottky and Ohmic contacts, however the discussion is usually limited to contact on low resistivity semiconductors. Such textbook case would imply the use of depletion approximation, etc. Even numerous scientific publication discussing contacts on wide band-gap, high resistivity semiconductor,...