15–19 Nov 2021
Fukuoka Convention Center
Asia/Tokyo timezone

Effect of different bending diameters on the current-carrying capacity of iron-based superconducting tapes

THU-PO3-605-05
18 Nov 2021, 10:00
2h
Fukuoka Convention Center

Fukuoka Convention Center

Speaker

Chunyan Li (Institute of High Energy Physics, Chinese Academy of Sciences)

Description

The iron-based superconductor (IBS) is a good candidate for high field magnet applications. The bending effect and properties of IBS tapes were systematically investigated in this work. The bent Ba1-xKxFe2As2 (Ba122/Ag/AgSn) 7-filamentary tapes with different bending diameters (D=10, 15, 20, 25, 30 mm) were prepared by wind-and-react method. A special mechanical structure was used to prevent the heat-treated IBS tapes from being damaged during joint soldering. The critical current (Ic) performances of all the bent samples have been tested at 4.2 K and 10 T. When the bending diameter is smaller than 30 mm, the transport Ic of bent IBS tapes decreases with smaller bending diameters. The average ratio of Ic (bent tape) and Ic (straight tape) was also calculated. Compared with the ratio value of 92.6% for D30 tapes, the ratio value for D10 tapes is 63%, which should be related to the cracks observed in the Ba122 superconducting cores. The Optical Microscope Images (OMI) show a lot of cracks that appear regularly in part of the superconducting cores under tensile stress, especially in D10 bent IBS tapes. In contrast, almost no cracks are seen in the superconducting cores subjected to compressive stress. The stress distributions in the bent tapes during the bending and annealing processes were simulated using the software. The most possible formation mechanism of cracks will also be discussed in detail.
Keywords: Iron-based superconductor, bent tape, critical current, stress, cracks

Authors

Chunyan Li (Institute of High Energy Physics, Chinese Academy of Sciences) Rui Kang (Institute of High Energy Physics, CAS) Yanchang Zhu (Institute of Electrical Engineering, Chinese Academy of Sciences) Qiqi Wang (Institute of Plasma Physics, Chinese Academy of Sciences) Zhen Zhang (Institute of High Energy Physics, Chinese Academy of Sciences) Yingzhe Wang (IHEP) Jin Zhou (Institute of High Energy Physics, Chinese Academy of Sciences) Huanli Yao (Institute of High Energy Physics, Chinese Academy of Sciences) Chengtao Wang (Institute of High Energy Physics, University of Chinese Academy of Sciences) Cong Liu (Institute of Electrical Engineering, Chinese Academy of Sciences) Xianping Zhang (Institute of Electrical Engineering, Chinese Academy of Science) Dongliang Wang (Institute of Electrical Engineering, CAS) fang Liu Yanwei Ma (Institute of Electrical Engineering, Chinese Academy of Sciences) Qingjin XU (IHEP)

Presentation materials