May 24 – 28, 2021
America/Vancouver timezone

Radiation damage investigation of epitaxial p-type silicon using Schottky and pn-junction diodes

May 27, 2021, 10:42 AM
Parallel session talk Sensors: Solid-state position sensors Sensors: Solid-state sensors for tracking


Christoph Thomas Klein (Carleton University (CA))


Focus of this RD50 project is the investigation of trap energy levels introduced by radiation damage in epitaxial p-type silicon. Using 6-inch wafers of various boron doping concentrations (1e13, 1e14, 1e15, 1e16, and 1e17 cm-3) with a 50 µm epitaxial layer, multiple iterations of test structures consisting of Schottky and pn-junction diodes of different sizes and flavours are being fabricated at RAL and Carleton University.

Details on the initial fabrication phase of devices on high resistivity wafers will be given. IV and CV scans of test structures have been performed and cross-checked between institutes, the results of which will be presented.

Samples of both Schottky and pn-junction diodes have been further investigated using Deep-Level Transient Spectroscopy (DLTS) and Thermal Admittance Spectroscopy (TAS) to characterise trap energy levels in unirradiated devices.
The findings as well as plans for measurements of irradiated samples will be discussed.

TIPP2020 abstract resubmission? No, this is an entirely new submission.

Primary author

Enrico Giulio Villani (Science and Technology Facilities Council STFC (GB))


Christoph Thomas Klein (Carleton University (CA)) Thomas Koffas (Carleton University (CA)) Philip Patrick Allport (University of Birmingham (UK)) Laura Gonella (University of Birmingham (UK)) Ioannis Kopsalis (University of Birmingham (GB)) Igor Mandic (Jozef Stefan Institute (SI)) Garry Tarr (Carleton University (CA)) Robert Vandusen (Carleton University (CA)) Fergus Wilson (Science and Technology Facilities Council STFC (GB)) Hongbo Zhu (IHEP (CN))

Presentation materials