Speaker
Botho Albrecht Paschen
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
Description
N-in-p planar pixel sensors with an active thickness of 200 μm produced at CiS,
and 100-200 μm thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and
FE-I4 read-out chips and irradiated in Ljubljana, Los Alamos and KIT up to a fluence of 1.4×10^{16} n_{eq}/cm^2.
Charge collection properties and tracking efficiencies are studied to investigate their possible
applications in the inner layers of the ATLAS pixel detectors at HL-LHC.
An update on the status of the new production of active edge pixels at ADVACAM is given.
