Speaker
Andreas Justin Gisen
(Technische Universitaet Dortmund (DE))
Description
Several FE-I3 sized n$^+$-in-n single chip sensors have been irradiated to fluences up to $2 \cdot 10^{16} n_{eq}/cm^2$ which may possibly be reached in the inner ATLAS pixel layers in HL-LHC. To determine the scaling behaviour, the leakage current was measured depending on the voltage or on the temperature for individual sensors.
In addition to these measurements an FE-I3 n$^+$-in-n single chip assembly irradiated to a fluence of $2 \cdot 10^{16} n_{eq}/cm^2$ was annealed in small steps to an overall time of 700 \,min at $ 60\,^{\circ}\mathrm{C} $. The impact on the leakage current and the collected charge was characterized.
The results obtained from this two studies are presented.
Author
Andreas Justin Gisen
(Technische Universitaet Dortmund (DE))
