Speaker
Description
There are several applications where solid devices are exposed to irradiation. Depending on the operational conditions (type of the particles, temperature, fluence) the physical properties of the exposed device degrades differently, reaching the point of electrical failure in very harsh enviroments. The radiation damage, starting already under low irradiation fluences, get more complex with increasing the fluences due to the generation of various type of irradiation induced, electrically active, defects. Accordingly, the defect characterization becomes a more difficult and costly task, requiring several complementary techniques to understand the detailed relation between the “microscopic” reasons as based on defect analysis and their “macroscopic” consequences for device performance. In this respect, the talk will focus on the defect characterization techniques suitable for investigating highly irradiated materials/structures, employed and developed within CERN RD50 Collaboration: I-DLTS, TSC and TDRC for electrical characterization of bulk and interface defect states, HRTEM and EPR for structural and chemical identification of the radiation induced defects. Correlations with the results obtained by other techniques determining the „macroscopic” electrical properties of the devices (leakage current, effective doping, carriers trapping lifetime) will be presented as well.
