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19–21 Feb 2018
Max-Planck-Institut für Physik, Munich
Europe/Zurich timezone

An in-depth study of Inverse-LGAD sensors

Not scheduled
15m
Max-Planck-Institut für Physik, Munich

Max-Planck-Institut für Physik, Munich

Max-Planck-Institut für Physik (Werner-Heisenberg-Institut) Föhringer Ring 6 80805 München

Speaker

Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC))

Description

An in-depth study of a p-in-p LGAD sensor (Inverse-LGAD) is presented. Contrary to the conventional LGAD, the baseline device for the HL-LHC mip timing detectors, the I-LGAD has a non-segmented deep p-well (the multiplication layer). Therefore, I-LGADs should ideally present a constant gain value over all the sensitive region of the device without gain drops between the signal collecting electrodes; in other words, I-LGADs should have a 100% fill factor by design. We have experimentally confirmed this feature on a strip-like segmented i-LGAD and compare it against a conventional strip-like LGAD and PIN devices. Tracking performance was determined with MIPs using the AIDA telescope at the SPS H6 test beam line. Finally, a timing resolution of tens of picoseconds was determined using a dedicated laser test-stand.

Primary authors

Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC)) Andrea Garcia Alonso (Universidad de Cantabria (ES)) Esteban Curras Rivera (Universidad de Cantabria (ES)) Gervasio Gomez (Universidad de Cantabria (ES)) Javier Gonzalez Sanchez (Universidad de Cantabria (ES)) Dr Jordi Duarte Campderros (Universidad de Cantabria (ES)) Marcos Fernandez Garcia (Universidad de Cantabria (ES)) Richard Jaramillo Echeverria (Universidad de Cantabria (ES)) Dr Salvador Hidalgo Villena (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC)) Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES)) Maria del Mar Carulla Areste (Instituto de Microelectronica de Barcelona IMB-CNM) Michael Moll (CERN) Sofia Otero Ugobono (CERN/Universidade de Santiago de Compostela (ES)) Matteo Centis Vignali (CERN)

Presentation materials

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