13th "Trento" Workshop on Advanced Silicon Radiation Detectors

Europe/Zurich
Max-Planck-Institut für Physik, Munich

Max-Planck-Institut für Physik, Munich

Max-Planck-Institut für Physik (Werner-Heisenberg-Institut) Föhringer Ring 6 80805 München
Description

Continuing in its tradition, the goal of the workshop is to bring together experts on sensor technology (design and processing), front-end electronics, system issues, detector applications (e.g. particle tracking, medical and biological imaging) for discussions of the present state of the art, establishment of requirements of the fields  and future programs.
 
The workshop will feature invited talks and contributed presentations, with ample time for discussions.

This event is jointly organized by the Max-Planck-Institut für Physik and the Semiconductor Laboratory of the Max-Planck Society (MPG-HLL)

Local Organization Committee:

  • Anna Macchiolo, Jelena Ninkovic, Richard Nisius

International Organizing Committee:

  • Maurizio Boscardin - FBK, Italy
  • Gianluigi Casse - FBK, Italy and Univ. Liverpool, UK
  • Gian Franco Dalla Betta - Univ. Trento, Italy
  • Claudio Piemonte - FBK, Italy
  • Hartmut Sadrozinski - SCIPP UCSC, USA
  • Yoshinobu Unno - KEK, Japan
Participants
  • Ada Solano
  • Adriano Lai
  • Alexander Bähr
  • Andre Schoening
  • Andrea Coccaro
  • Angelo Loi
  • Anna Macchiolo
  • Anna Vignati
  • Arianna Morozzi
  • Armin Fehr
  • Arno Emanuel Kompatscher
  • Audrey Ducourthial
  • Carlo Civinini
  • Christian Koffmane
  • Christian Riegel
  • Christopher Betancourt
  • Cinzia Da Via
  • D M S Sultan
  • D M S Sultan
  • Daniel Muenstermann
  • Davide Zuolo
  • Dmytro Hohov
  • Dominik Dannheim
  • Donato Creanza
  • Eduard Prinker
  • Elisa Fumagalli
  • Esteban Curras Rivera
  • Ester Ricci
  • Ettore Zaffaroni
  • Francesco Di Capua
  • Georg Steinbrueck
  • Gervasio Gomez
  • Giacomo Borghi
  • Gian-Franco Dalla Betta
  • GIANLUIGI CASSE
  • Giovanni Calderini
  • Giovanni Paternoster
  • Giulio Pellegrini
  • Hans-Günther Moser
  • Hartmut Sadrozinski
  • Helge Christoph Beck
  • Hongtao Yang
  • Ivan Vila Alvarez
  • Jelena Ninkovic
  • Jiaguo Zhang
  • Joern Lange
  • Joern Schwandt
  • Johannes Treis
  • Jorge Neves
  • Julien-Christopher Beyer
  • Kevin Connor Nash
  • Ki Lie
  • Kristof De Bruyn
  • Kukka Miikkulainen
  • Leonardo Di Venere
  • Lorenzo Rossini
  • Maciej Witold Majewski
  • Marcello Campajola
  • Marco Bomben
  • Marco Ferrero
  • Marco Mandurrino
  • Marco Meschini
  • Marco Povoli
  • Marcos Fernandez Garcia
  • Marko Mikuz
  • Matteo Centis Vignali
  • Matteo Porro
  • Matthew Franks
  • Matthias Wolfgang Würl
  • MAURIZIO BOSCARDIN
  • Meghranjana Chatterjee
  • Mitja Predikaka
  • Natascha Savic
  • Nicolo Cartiglia
  • Omar Hammad Ali
  • Paolo Brogi
  • Pedro Almeida
  • Philipp Leitl
  • Rainer Richter
  • Reem Taibah
  • Richard Nisius
  • Roberta Arcidiacono
  • Salvador Hidalgo
  • Sarah Seif El Nasr
  • Siegfried Bethke
  • Simone Monzani
  • Stefan Petrovics
  • Stefano Terzo
  • Thomas Bergauer
  • Tianyang Wang
  • Valentina Sola
  • Vladimir Cindro
  • Wolfgang Treberspurg
  • York Hämisch
    • Registration
    • Welcome
      • 1
        Welcome
        Speaker: Siegfried Bethke (Max-Planck-Institut fur Physik (DE))
    • Tracking detectors for HEP experiments
      Convener: Marko Mikuz (Jozef Stefan Institute (SI))
    • 3D sensors (I): :
      Convener: Georg Steinbrueck (Hamburg University (DE))
      • 8
        The INFN Pixel Sensor R&D for the HL-LHC Upgrade of the CMS Experiment
        Speaker: Marco Meschini (Universita e INFN, Firenze (IT))
      • 9
        Characterization and simulation of small-pitch 3D diodes after irradiation up to 3.5×10ˆ16 neq cmˆ-2
        Speaker: Gian Franco Dalla Betta (Universita degli Studi di Trento (IT))
    • 3D sensors (II)
      Convener: Georg Steinbrueck (Hamburg University (DE))
    • 3D sensors and diamonds
      Convener: Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC))
    • Electronics: :
      • 19
        The RD53A chip
        Speaker: Tomasz Hemperek (University of Bonn (DE))
    • Bavarian Buffett
    • Planar pixel sensors (I): :
      Convener: Daniel Muenstermann (Lancaster University (GB))
      • 20
        FBK-INFN-LPNHE thin n-on-p pixel detectors: beamtest results
        Speaker: Audrey Ducourthial (Centre National de la Recherche Scientifique (FR))
      • 21
        CMS Pixel detector development for the HL-LHC with first results for HPK prototype sensors
        Speaker: Georg Steinbrueck (Hamburg University (DE))
      • 22
        New approaches to HEP sensors at CiS
        Speaker: Arno Kompatcher (CIS )
      • 23
        Compilation of the results on characterization of ADVACAM edgeless pixel sensors
        Speaker: Dmytro Hohov (Université Paris-Saclay (FR))
      • 24
        Development of N-on-P planar technology at SINTEF MiNaLab
        Speaker: Dr Marco Povoli (SINTEF MiNaLab)
    • Coffe Break: Coffee Break
    • Planar pixel sensors (II): 10:45
      Convener: Daniel Muenstermann (Lancaster University (GB))
    • CMOS sensors: :
      Convener: Dominik Dannheim (CERN)
      • 27
        Radiation-hard passive CMOS-sensors
        Speaker: David-Leon Pohl (University of Bonn (DE))
      • 28
        Recent developments on monolithic CMOS pixel sensors in TowerJazz 180nm technology
        Speaker: Christian Riegel (Bergische Universitaet Wuppertal (DE))
      • 29
        Performance of the H35DEMO chip monolithic matrices before and after irradiation
        Speaker: Stefano Terzo (IFAE Barcelona (ES))
      • 30
        Characterization of H35 HV-CMOS Sensors before and after Proton Irradiation
        Speaker: D M S Sultan (Universite de Geneve (CH))
      • 31
        Depleted monolithic CMOS pixels using column drain readout for the ATLAS Inner Tracker
        Speaker: Tianyang Wang (University of Bonn (DE))
      • 32
        E-TCT characterisation of irradiated backside biased H35DEMO pixel demonstrators
        Speaker: Mr Matthew Franks (University of Liverpool)
      • 33
        Effect of thinning and backplane processing on charge collection properties of irradiated CMOS
        Speaker: Marko Mikuz (Jozef Stefan Institute (SI))
    • Lunch
    • Timing Detectors (I)
      Convener: Joern Lange (IFAE Barcelona)
    • Coffee Break
    • Timing Detectors (II)
      Convener: Gianluigi Casse (University of Liverpool (GB))
    • Radiation Hardness: :
    • Social Dinner at Augustiner Keller

      https://www.augustinerkeller.de/home/?L=1

    • Simulations
      Convener: Gian Franco Dalla Betta (Universita degli Studi di Trento (IT))
      • 47
        TCAD Simulations of Silicon Sensors at HL-LHC Conditions
        Speaker: Marco Bomben (LPNHE & Université Paris Diderot, Paris (FR))
      • 48
        A TCAD based model of double metal layer effects and a review of the radiation damage and monitoring of LHCb Velo

        The VErtex LOcator (VELO) is a silicon-strip detector located around the interaction region of LHCb.
        It is placed as close as 8 mm from the LHC beams undertaking a very high radiation damage.The sensors have been exposed to fluences up to $3.5 \times 10^{14} 1 MeV-neq/cm ^{2}$. The digital processing performed on back-end boards requires approximately 1 million parameters.
        Dedicated runs are performed to calibrate the processing algorithms. Regular voltage scans are taken to measure the collected charge and Cluster Finding Efficiency (CFE), determining the depletion voltage. An analysis over the whole calibration parameters history, the data quality assessment and the overall performance of the VELO and will be presented. The detectors are constructed with two metal layers to cover the R/$\phi$ strips and route the signal to the front-end chips. A loss of signal amplitude is observed with a dependency on the distance to the routing lines. A TCAD simulation was implemented with the detailed detector geometry.
        Using the Perugia n-type bulk model and the Peltola surface damage model it is shown that up to 60\% of the charge is collected by routing lines. This is caused by trapping of the otherwise mobile electron accumulation layer at the oxide-silicon interface, causing the shielding effect on the routing lines to be reduced. The observed drop in CFE can be explained by the angular dependence of charge loss to the second metal layer. The efficiency drop as function of track radius and angle is reproduced combining 2D and 3D TCAD simulations.

        Speaker: Maciej Witold Majewski (AGH University of Science and Technology (PL))
      • 49
        Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector
        Speaker: Lorenzo Rossini (Università degli Studi e INFN Milano (IT))
      • 50
        TCAD simulation of RD53A compatible pixel cells and sensor productions at MPP
        Speaker: Julien-Christopher Beyer (Max-Planck-Institut fur Physik (DE))
      • 51
        Advances on TCAD numerical modeling of silicon detectors operations at HL-LHC fluences
        Speaker: Arianna Morozzi (University and INFN, Perugia (IT))
    • Coffee Break
    • Non HEP Applications
      Convener: Cinzia Da Via (University of Manchester (GB))
      • 52
        Silicon detectors in medical applications and for characterization of laser-driven ion sources
        Speaker: Matthias Wolfgang Würl (University of Munich (LMU))
      • 53
        Results on Proton Tomography
        Speaker: Carlo Civinini (Universita e INFN, Firenze (IT))
      • 54
        MoVeIT strip silicon detectors for proton beam monitoring: preliminary results
        Speaker: Anna Vignati (INFN - National Institute for Nuclear Physics)
      • 55
        Detector development for the WFI of Athena
        Speaker: Wolfgang Treberspurg (MPE)
      • 56
        Displacement Damage Test of CMOS SPAD sensors for Space Application
        Speaker: Marcello Campajola (INFN and University of Naples "Federico II")
      • 57
        Random Telegraph Signal evidence in Proton Irradiated CMOS SPADs
        Speaker: Francesco Di Capua (Istituto Nazionale di Fisica Nucleare (INFN))
      • 58
        Monolithic Active Pixel Sensors for space applications: the case of ALPIDE
        Speaker: Ester Ricci (Universita degli Studi di Trento è INFN (IT))
    • Lunch
    • Non HEP Applications II: :
      Convener: Jelena Ninkovic (MPG Halbleiterlabor)
      • 59
        The Quadropix DEPFET concept
        Speaker: Alexander Bähr (MPG-HLL)
      • 60
        The DSSC Detector for the European XFEL: sensor options, readout electronics and experimental results.
        Speaker: Matteo Porro (European XFEL GmbH)
      • 61
        Experimental Characterization and Future Sensor Developments for ARDESIA, a 4-Channels Fast SDD X-ray Spectrometer for Synchrotron Applications
        Speaker: Giacomo Borghi (FBK)
      • 62
        APiX: a pixelated avalanche sensor for digital charged particle detection.
        Speakers: Paolo Brogi (Universita degli studi di Siena (IT)), Paolo Brogi (Sezione di Pisa (INFN))
      • 63
        EDET DH80K- A DEPFET based Ultra High Speed Camera System for TEM Direct Electron Imaging
        Speaker: Johannes Treis (MPG Semiconductor Laboratory)
    • Coffee Break
    • Non HEP applications III
      • 64
        Towards the realization of a SiPM-based camera for the Schwarzschild-Couder Telescope proposed for the Cherenkov Telescope Array
        Speaker: Leonardo Di Venere (INFN - National Institute for Nuclear Physics)
      • 65
        X-ray Detectors at PSI and Recent Developments using LGADs for Low Energy X-ray Detection
        Speaker: Jiaguo Zhang (Paul Scherrer Institut)
      • 66
        Silicon Photomultipliers developed at FBK for Physics Applications
        Speaker: Giovanni Paternoster (Fondazione Bruno Kessler (FBK))
    • Visit to MPG HLL Other Institutes

      Other Institutes

      MPG HLL, Otto Hahn Ring 6, 81739 Munich