13th "Trento" Workshop on Advanced Silicon Radiation Detectors
Max-Planck-Institut für Physik, Munich
Continuing in its tradition, the goal of the workshop is to bring together experts on sensor technology (design and processing), front-end electronics, system issues, detector applications (e.g. particle tracking, medical and biological imaging) for discussions of the present state of the art, establishment of requirements of the fields and future programs.
The workshop will feature invited talks and contributed presentations, with ample time for discussions.
This event is jointly organized by the Max-Planck-Institut für Physik and the Semiconductor Laboratory of the Max-Planck Society (MPG-HLL)
Local Organization Committee:
- Anna Macchiolo, Jelena Ninkovic, Richard Nisius
International Organizing Committee:
- Maurizio Boscardin - FBK, Italy
- Gianluigi Casse - FBK, Italy and Univ. Liverpool, UK
- Gian Franco Dalla Betta - Univ. Trento, Italy
- Claudio Piemonte - FBK, Italy
- Hartmut Sadrozinski - SCIPP UCSC, USA
- Yoshinobu Unno - KEK, Japan
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Registration
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Welcome
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1
WelcomeSpeaker: Siegfried Bethke (Max-Planck-Institut fur Physik (DE))
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1
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Tracking detectors for HEP experimentsConvener: Marko Mikuz (Jozef Stefan Institute (SI))
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2
Silicon pixel-detector R&D for CLICSpeaker: Dominik Dannheim (CERN)
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3
Ultra-thin active pixel detector for the Belle II VXDSpeaker: Christian Koffmane (MPI für Physik)
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4
Coffee Break
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6
The CMS Outer Tracker Upgrade for the High Luminosity LHCSpeaker: Sarah Seif El Nasr (University of Bristol (GB))
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7
Operational Experience and Performance with the ATLAS Pixel detector with emphasis on radiation damageSpeaker: Hongtao Yang (University of California Berkeley (US))
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2
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3D sensors (I): :Convener: Georg Steinbrueck (Hamburg University (DE))
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8
The INFN Pixel Sensor R&D for the HL-LHC Upgrade of the CMS ExperimentSpeaker: Marco Meschini (Universita e INFN, Firenze (IT))
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9
Characterization and simulation of small-pitch 3D diodes after irradiation up to 3.5×10ˆ16 neq cmˆ-2Speaker: Gian Franco Dalla Betta (Universita degli Studi di Trento (IT))
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8
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3D sensors (II)Convener: Georg Steinbrueck (Hamburg University (DE))
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10
Status of 3D Sensor Developments at FBKSpeaker: Maurizio Boscardin (Fondazione Bruno Kessler (FBK))
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11
Radiation hardness of 3D pixel sensors up to unprecedented fluences of 3e16 neq/cm²Speaker: Joern Lange (IFAE Barcelona)
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12
Qualification measurements of INFN-FBK 3D modules for High Luminosity LHCSpeaker: Andrea Coccaro (INFN Genova (IT))
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13
Coffee Break
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14
Status of 3D detector development at SINTEF for ITk upgradeSpeaker: Marco Povoli (SINTEF MiNaLab)
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10
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3D sensors and diamondsConvener: Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC))
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15
Design of 3D silicon sensors for high resolution time measurementsSpeaker: Angelo Loi (INFN - National Institute for Nuclear Physics)
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16
Test Beam study of small-pitch 3D pixel sensors from CNMSpeaker: Gervasio Gomez (Universidad de Cantabria (ES))
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17
Status of ATLAS Diamond DetectorsSpeaker: Helge Christoph Beck (Georg August Universitaet Goettingen (DE))
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18
The CT-PPS project: detector hardware, operational experience and prospects for 2018Speakers: Valentina Sola (Universita e INFN Torino (IT)), Valentina Sola (INFN Torino)
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15
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Electronics: :
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19
The RD53A chipSpeaker: Tomasz Hemperek (University of Bonn (DE))
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19
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Bavarian Buffett
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Planar pixel sensors (I): :Convener: Daniel Muenstermann (Lancaster University (GB))
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20
FBK-INFN-LPNHE thin n-on-p pixel detectors: beamtest resultsSpeaker: Audrey Ducourthial (Centre National de la Recherche Scientifique (FR))
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21
CMS Pixel detector development for the HL-LHC with first results for HPK prototype sensorsSpeaker: Georg Steinbrueck (Hamburg University (DE))
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22
New approaches to HEP sensors at CiSSpeaker: Arno Kompatcher (CIS )
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23
Compilation of the results on characterization of ADVACAM edgeless pixel sensorsSpeaker: Dmytro Hohov (Université Paris-Saclay (FR))
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24
Development of N-on-P planar technology at SINTEF MiNaLabSpeaker: Dr Marco Povoli (SINTEF MiNaLab)
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20
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Coffe Break: Coffee Break
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Planar pixel sensors (II): 10:45Convener: Daniel Muenstermann (Lancaster University (GB))
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25
Studies of the MaPSA-light Module for the CMS Phase II UpgradeSpeaker: Kevin Connor Nash (Rutgers State Univ. of New Jersey (US))
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26
Research and development of new radiation tolerant pixel Silicon sensors for the high-luminositySpeaker: Davide Zuolo (Universita & INFN, Milano-Bicocca (IT))
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25
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CMOS sensors: :Convener: Dominik Dannheim (CERN)
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27
Radiation-hard passive CMOS-sensorsSpeaker: David-Leon Pohl (University of Bonn (DE))
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28
Recent developments on monolithic CMOS pixel sensors in TowerJazz 180nm technologySpeaker: Christian Riegel (Bergische Universitaet Wuppertal (DE))
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29
Performance of the H35DEMO chip monolithic matrices before and after irradiationSpeaker: Stefano Terzo (IFAE Barcelona (ES))
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30
Characterization of H35 HV-CMOS Sensors before and after Proton IrradiationSpeaker: D M S Sultan (Universite de Geneve (CH))
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31
Depleted monolithic CMOS pixels using column drain readout for the ATLAS Inner TrackerSpeaker: Tianyang Wang (University of Bonn (DE))
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32
E-TCT characterisation of irradiated backside biased H35DEMO pixel demonstratorsSpeaker: Mr Matthew Franks (University of Liverpool)
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33
Effect of thinning and backplane processing on charge collection properties of irradiated CMOSSpeaker: Marko Mikuz (Jozef Stefan Institute (SI))
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27
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Lunch
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Timing Detectors (I)Convener: Joern Lange (IFAE Barcelona)
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34
Recent Results with Ultra-Fast Silicon DetectorsSpeaker: Hartmut Sadrozinski (SCIPP, UC santa Cruz)
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35
Latest measurements of noise in LAGAD sensorsSpeaker: Nicolo Cartiglia (INFN Torino)
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36
Development of Strip-type Low-Gain Avalanche DetectorsSpeaker: Yoshinobu Unno (High Energy Accelerator Research Organization (JP))
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37
Resistive AC-Coupling: a new read-out paradigm in 4D tracking with Ultra-Fast Silicon DetectorsSpeaker: Marco Mandurrino (Universita e INFN Torino (IT))
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38
Radiation Damage Effects on LGADs and Deep Diffused APDsSpeaker: Matteo Centis Vignali (CERN)
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39
Production and design of LGAD with high radiation resistanceSpeaker: Giovanni Paternoster (Fondazione Bruno Kessler (FBK))
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34
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Coffee Break
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Timing Detectors (II)Convener: Gianluigi Casse (University of Liverpool (GB))
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40
Study of the radiation resistance of different LGAD gain layer designsSpeaker: Roberta Arcidiacono (Universita e INFN Torino (IT))
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41
An in-depth study of Inverse-LGAD sensorsSpeaker: Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC))
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42
Two Photon Absorption-TCT of irradiated LGADsSpeaker: Marcos Fernandez Garcia (Universidad de Cantabria (ES))
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43
Silicon Sensors of the CMS High Granularity CalorimeterSpeaker: Thomas Bergauer (Austrian Academy of Sciences (AT))
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40
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Radiation Hardness: :
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44
Radiation hardness study of HV-CMOS sensors using Transient Current TechniqueSpeaker: Armin Fehr (CERN, University of Bern)
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45
Characterization of acceptor removal in epitaxial silicon pad diodesSpeaker: Pedro Dias De Almeida (FCT Fundacao para a Ciencia e a Tecnologia (PT))
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46
edge-TCT results from AMS HV-CMOS test chips irradiated with 800 MeV protonsSpeaker: Daniel Muenstermann (Lancaster University (GB))
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44
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Social Dinner at Augustiner Keller
https://www.augustinerkeller.de/home/?L=1
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SimulationsConvener: Gian Franco Dalla Betta (Universita degli Studi di Trento (IT))
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47
TCAD Simulations of Silicon Sensors at HL-LHC ConditionsSpeaker: Marco Bomben (LPNHE & Université Paris Diderot, Paris (FR))
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48
A TCAD based model of double metal layer effects and a review of the radiation damage and monitoring of LHCb Velo
The VErtex LOcator (VELO) is a silicon-strip detector located around the interaction region of LHCb.
It is placed as close as 8 mm from the LHC beams undertaking a very high radiation damage.The sensors have been exposed to fluences up to $3.5 \times 10^{14} 1 MeV-neq/cm ^{2}$. The digital processing performed on back-end boards requires approximately 1 million parameters.
Dedicated runs are performed to calibrate the processing algorithms. Regular voltage scans are taken to measure the collected charge and Cluster Finding Efficiency (CFE), determining the depletion voltage. An analysis over the whole calibration parameters history, the data quality assessment and the overall performance of the VELO and will be presented. The detectors are constructed with two metal layers to cover the R/$\phi$ strips and route the signal to the front-end chips. A loss of signal amplitude is observed with a dependency on the distance to the routing lines. A TCAD simulation was implemented with the detailed detector geometry.
Using the Perugia n-type bulk model and the Peltola surface damage model it is shown that up to 60\% of the charge is collected by routing lines. This is caused by trapping of the otherwise mobile electron accumulation layer at the oxide-silicon interface, causing the shielding effect on the routing lines to be reduced. The observed drop in CFE can be explained by the angular dependence of charge loss to the second metal layer. The efficiency drop as function of track radius and angle is reproduced combining 2D and 3D TCAD simulations.Speaker: Maciej Witold Majewski (AGH University of Science and Technology (PL)) -
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Modeling Radiation Damage to Pixel Sensors in the ATLAS DetectorSpeaker: Lorenzo Rossini (Università degli Studi e INFN Milano (IT))
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50
TCAD simulation of RD53A compatible pixel cells and sensor productions at MPPSpeaker: Julien-Christopher Beyer (Max-Planck-Institut fur Physik (DE))
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51
Advances on TCAD numerical modeling of silicon detectors operations at HL-LHC fluencesSpeaker: Arianna Morozzi (University and INFN, Perugia (IT))
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47
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Coffee Break
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Non HEP ApplicationsConvener: Cinzia Da Via (University of Manchester (GB))
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52
Silicon detectors in medical applications and for characterization of laser-driven ion sourcesSpeaker: Matthias Wolfgang Würl (University of Munich (LMU))
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53
Results on Proton TomographySpeaker: Carlo Civinini (Universita e INFN, Firenze (IT))
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54
MoVeIT strip silicon detectors for proton beam monitoring: preliminary resultsSpeaker: Anna Vignati (INFN - National Institute for Nuclear Physics)
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55
Detector development for the WFI of AthenaSpeaker: Wolfgang Treberspurg (MPE)
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56
Displacement Damage Test of CMOS SPAD sensors for Space ApplicationSpeaker: Marcello Campajola (INFN and University of Naples "Federico II")
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57
Random Telegraph Signal evidence in Proton Irradiated CMOS SPADsSpeaker: Francesco Di Capua (Istituto Nazionale di Fisica Nucleare (INFN))
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58
Monolithic Active Pixel Sensors for space applications: the case of ALPIDESpeaker: Ester Ricci (Universita degli Studi di Trento è INFN (IT))
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52
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Lunch
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Non HEP Applications II: :Convener: Jelena Ninkovic (MPG Halbleiterlabor)
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59
The Quadropix DEPFET conceptSpeaker: Alexander Bähr (MPG-HLL)
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60
The DSSC Detector for the European XFEL: sensor options, readout electronics and experimental results.Speaker: Matteo Porro (European XFEL GmbH)
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61
Experimental Characterization and Future Sensor Developments for ARDESIA, a 4-Channels Fast SDD X-ray Spectrometer for Synchrotron ApplicationsSpeaker: Giacomo Borghi (FBK)
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62
APiX: a pixelated avalanche sensor for digital charged particle detection.Speakers: Paolo Brogi (Universita degli studi di Siena (IT)), Paolo Brogi (Sezione di Pisa (INFN))
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EDET DH80K- A DEPFET based Ultra High Speed Camera System for TEM Direct Electron ImagingSpeaker: Johannes Treis (MPG Semiconductor Laboratory)
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59
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Coffee Break
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Non HEP applications III
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64
Towards the realization of a SiPM-based camera for the Schwarzschild-Couder Telescope proposed for the Cherenkov Telescope ArraySpeaker: Leonardo Di Venere (INFN - National Institute for Nuclear Physics)
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65
X-ray Detectors at PSI and Recent Developments using LGADs for Low Energy X-ray DetectionSpeaker: Jiaguo Zhang (Paul Scherrer Institut)
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66
Silicon Photomultipliers developed at FBK for Physics ApplicationsSpeaker: Giovanni Paternoster (Fondazione Bruno Kessler (FBK))
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64
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Visit to MPG HLL Other Institutes
Other Institutes
MPG HLL, Otto Hahn Ring 6, 81739 Munich
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